Contact plug, semiconductor device and method of manufacturing the same

Abstract

The invention provides a contact plug, a semiconductor device and a manufacturing method thereof, which can realize the manufacture of a replacement contact plug, and can cover only the area to be contacted of the structure to be contacted with the assistance of a filling layer. The dummy contact is removed to form a contact trench at the position of the dummy contact, and a dielectric spacer is formed on the sidewall of the contact trench, and then a conductive material layer is filled in the space of the contact trench surrounded by the dielectric sidewall , to form contact plugs, this alternative process can reduce the difficulty of forming contact plugs, improve the quality of the formed contact plugs, and can increase the contact area of ​​the formed contact plugs by reducing the thickness of the dielectric sidewall , reducing contact resistance, suitable for the manufacture of contact plugs on gates, source and drain regions, body regions and other contact structures, and can improve the performance of corresponding contact plugs and semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a contact plug, a semiconductor device and a manufacturing method thereof. Background technique [0002] MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is the main building block of most semiconductor devices. As the size of semiconductor devices becomes smaller and smaller (scaling continues below the 14nm node), the distance between the drain and the source is also shortened. The short-channel effect becomes more and more obvious, the control ability of the gate to the channel becomes worse, and it becomes more and more difficult for the gate voltage to pinch off the channel, and it is more likely to cause subthrehhold leakage (Subthrehhold leakage). In order to suppress the short channel effect, it is proposed to form a Fin Field Effect Transistor (Fin Field effect transistor, FinFET) on an SOI wafer or a bulk semiconductor substrate. The ...

AI Technical Summary

Problems solved by technology

However, with the increasing integration of integrated circuits, the contact plugs formed by the current contact plug manufacturing methods cannot meet the manufacturing requirements of higher-performance FinFET devices.

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