43results about How to "Reduce the difficulty of filling" patented technology

A phase change memory and its fabrication method are provided. A bottom electrode structure is provided through a substrate. A mask layer is formed on the substrate and the bottom electrode structure. A first opening is formed in the mask layer to expose the bottom electrode structure. A spacer is formed on sidewalls and bottom surface portions of the first opening to expose a surface portion of the bottom electrode structure. The first opening including the spacer therein has a bottom width less than a top width. A heating layer is formed at least on the surface portion of the bottom electrode structure exposed by the spacer. A phase change layer is formed on the heating layer to completely fill the first opening. A top electrode is formed on the phase change layer and the mask layer.

The invention discloses a method for filling electroplated copper, comprising the steps of 1, forming a trench or a through hole; 2, forming a copper seed crystal layer on the inner surface of the trench or the via hole; 3, oxidizing the surface of the copper seed crystal layer to form copper oxide during the waiting time between the formation of the copper seed crystal layer and the copper electroplating process in the next step; 4, performing a reduction process before the copper electroplating process, and then performing the copper electroplating process to fill the trench or the through hole with the copper layer. The method, by performing the reduction process before the copper electroplating process, can eliminate the copper oxide on the surface of the copper seed crystal layer during the copper electroplating process and keep the thickness of the copper seed crystal layer at various positions on the inner surface of the trench or the through hole, thereby reducing the difficulty of the electroplated copper filling process and improving the electroplated copper filling ability.

The present invention provides a shielded gate field effect transistor and a method for forming the same. After the shielding electrode is formed, an isolation spacer with decreasing thickness from bottom to top is formed on the sidewall of the gate trench higher than the shielding electrode, so that the topography of the upper trench located above the shielding electrode is modified by the isolation spacer. In this way, the filling difficulty of the insulating filling layer can be reduced, and the filling performance of the insulating filling layer in the upper trench can be improved to avoid the occurrence of voids, and further, when the insulating filling layer is subsequently etched to form the isolation layer, a gap-free isolation layer can be formed to ensure the gate. Mutual isolation between electrode and shield electrode.

The invention provides a semiconductor isolation structure and a manufacturing method thereof. According to the manufacturing method, a plurality of grooves are formed in the semiconductor substrate,then a pull-back process is executed to enable the side walls of a pad oxide layer and a hard mask layer on the semiconductor substrate to shrink inwards, the grooves are filled with the first isolation dielectric layer, and then an ion implantation process is executed to enable the upper portion of the first isolation dielectric layer to form a modified area. The depth of the modified area is greater than or equal to the total thickness of the pad oxide layer and the hard mask layer, a part of the first isolation dielectric layer in the modified area is removed by soaking with an etching solution, holes in the first isolation dielectric layer are opened or even removed, and the second isolation dielectric layer is filled in the grooves, so that the holes in the isolation dielectric in thegrooves can be reduced, and the performance of the semiconductor device is improved. The groove filling quality and the performance of the semiconductor isolation structure are improved. The semiconductor isolation structure is obtained by using the manufacturing method.

The invention relates to the field of spiral bevel gears, in particular to the field of precision forging of spiral bevel gears. The precision forging device comprises a die set, a convex die, a toothed die, a lower die, an elastic part, a rack, a straight toothed spur gear, a driving straight toothed bevel gear and a driven straight toothed bevel gear, wherein the die set serves as the main body for connecting the parts, the lower die is arranged under the toothed die, the convex die is arranged on the upper part of the toothed die, the lower die, the convex die and the toothed die are closed to form a hermetic cavity, a retaining mechanism is arranged between the driven straight toothed bevel gear and the toothed die to enable the driven straight toothed bevel gear to only drive the toothed die to rotate in one direction, the driving straight toothed bevel gear is meshed with the driven straight toothed bevel gear and is coaxially connected with the straight toothed spur gear, the straight toothed spur gear is meshed with the rack, and the elastic part is arranged above the rack. The precision forging device and the precision forging method realize that the toothed die only rotates during demolding and does not rotate during die assembling and forge piece forming, so that the die filling difficulty and demolding difficulty after forming of a spiral bevel gear in the precision forging process are reduced; the purposes that a preformed blank is located and locked during die assembling, and a finished forged piece does not rotate along with the toothed die during die splitting are realized.

The invention discloses a method for simultaneously filling and flattening deep trenches with different sizes, which comprises the following steps: (1)depositing a layer or a plurality layers of combination bodies of oxide film or nitride film on a silicon substrate as a barrier layer, (2)depositing light-sensitive lacquer, after development, etching the combination bodies of oxide film or nitride film and revealing a silicon base which needs to etch the deep trenches in follow-up processes,(3) removing the light-sensitive lacquer and producing images of the deep trenches with different depth-to-width ratios through etching with utilization of the combination bodies of oxide film or nitride film as a barrier layer, (4)depositing a layer of oxidation film which is good in steps covering power on a silicon slice, (5)removing the oxidation film above the barrier layer through the manner of chemical mechanical polish, and therefore, depth-to-width ratios of the deep trenches are reduced, (6) filling all the deep trenches with different sizes with a plurality of continuous rounds of oxide film deposition and chemical mechanical polish. Filling difficulty of the deep trenches which have large height-to-width ratios is reduced and at the same time fillers in the large opening deep trenches are not removed. Process is simple and effect is obvious.

The invention provides a multi-chamber soft infusion bag production line. A film material is conveyed and formed through a bag making machine so as to be filled. The middle of a soft infusion bag is welded to a weld joint through a weld joint welding device, wherein the weld joint is arranged in the width direction. The soft infusion bag is divided into two parts in the length direction and horizontally clamped through a filling and sealing machine, a first bag body and a second bag body of the soft infusion bag are turned over to filling positions in the vertical direction through filling and sealing clamps, the first bag body is welded and sealed through a first filling device and a first sealing mold after being filled, and similarly, the second bag body is filled and sealed through a second filling device and a second sealing mold after the second bag body of the soft infusion bag is turned over. Due to the fact that the soft infusion bag is divided into the two parts in the length direction and clamped through the filling and sealing clamps, the two bag bodies are filled and sealed respectively, the length of the weld joint is decreased, cold joint quality is improved, the filling difficulty of the soft infusion bag is lowered, the structure is simple, and operation is stable.

The invention discloses an operating table. The operating table comprises a base and a platform arranged on the base, the base is provided with a cavity, a gas storage bottle is arranged in the cavity, a door plate is rotatably connected to the side wall of the cavity, a material carrying block is arranged in the cavity, a mounting groove matched with the gas storage bottle is formed in the material carrying block, idler wheels are arranged at the bottom of the material carrying block, a first movable groove matched with the idler wheels is formed in the bottom of the cavity, an inclined planeis arranged at one end of the first movable groove, and a first connecting pipe communicating with the gas storage bottle is arranged on the platform. The gas storage bottle is directly placed in thecavity, a pipeline does not need to be specially laid for the gas storage bottle, and the influence of the pipeline on space utilization in a laboratory is avoided. The gas storage bottle can be directly pulled out of the cavity to clean the bottle body, so that the cleaning difficulty of the gas storage bottle is reduced.

The present invention provides a shielded gate field effect transistor and a method for forming the same. After the first dielectric layer and the shielding electrode are formed in sequence, the part of the first dielectric layer higher than the shielding electrode is directly etched, so that the thickness of the etched first dielectric layer at the part higher than the shielding electrode decreases sequentially from bottom to top , so that the morphology of the upper trench above the shielding electrode can be modified, so that the filling difficulty of the insulating filling layer can be reduced, the filling performance of the insulating filling layer in the upper trench can be improved to avoid voids, and the insulating filling layer can be subsequently etched. When the isolation layer is formed, a gapless isolation layer can be formed to ensure mutual isolation between the gate electrode and the shield electrode.

The invention relates to a casting method of a main reducer housing. The casting method includes: a precoated sand core forming process, a smelting ball iron process and a casting process, the precoated sand core forming process includes core-making of precoated sand, coated sand type assembly and sand-type steel shot filling; the smelting ball iron process includes electric-furnace smelting and charging of molten iron and treatment; the casting method is characterized by including casting, unboxing, de-gating, one-step shot blasting, grinding, secondary shot blasting and detecting. With the method, exhaust smoothness is guaranteed, generation of hole defects in the casting is avoided from the sand core exhaust process, sand hole and pore defective reject rate is controlled within 1%, shrinkage or porosity defect is avoided, the casting is stable in size and high in surface smoothness, the yield is higher as compared with that with a traditional casting method of the main reducer housing, the production process is easier to control, and production competitiveness has higher advantages.