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Shielded gate field effect transistor and method of forming the same

A field effect transistor and shielded gate technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of short-circuiting between the gate electrode and the shielding electrode, so as to reduce the difficulty of filling and improve the isolation. performance, the effect of improving filling performance

Active Publication Date: 2022-07-15
中芯先锋集成电路制造(绍兴)有限公司
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  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for forming a shielded gate field effect transistor to solve the problem of easy short circuit between the gate electrode and the shielding electrode in the existing shielded gate field effect transistor

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  • Shielded gate field effect transistor and method of forming the same
  • Shielded gate field effect transistor and method of forming the same
  • Shielded gate field effect transistor and method of forming the same

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Embodiment Construction

[0060] As described in the background art, when the isolation layer between the gate electrode and the shield electrode is currently prepared, it is easy to cause a gap in the formed isolation layer. In view of this technical problem, the inventors of the present invention have found after research that the reason why gaps are easily formed in the isolation layer between the gate electrode and the shield electrode is that the insulating filling material used to form the isolation layer has voids, Furthermore, when the insulating filling material is etched to form the isolation layer, a gap will be generated in the formed isolation layer.

[0061] Specifically, a method for forming a shielded gate field effect transistor generally includes the following steps.

[0062] The first step, specific reference Figure 1aAs shown, a substrate 10 is provided, and a gate trench 11 is formed in the substrate 10, and a dielectric layer 61 and a shielding electrode 20 are also formed in th...

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Abstract

The present invention provides a shielded gate field effect transistor and a method for forming the same. After the first dielectric layer and the shielding electrode are formed in sequence, the part of the first dielectric layer higher than the shielding electrode is directly etched, so that the thickness of the etched first dielectric layer at the part higher than the shielding electrode decreases sequentially from bottom to top , so that the morphology of the upper trench above the shielding electrode can be modified, so that the filling difficulty of the insulating filling layer can be reduced, the filling performance of the insulating filling layer in the upper trench can be improved to avoid voids, and the insulating filling layer can be subsequently etched. When the isolation layer is formed, a gapless isolation layer can be formed to ensure mutual isolation between the gate electrode and the shield electrode.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a shielded gate field effect transistor and a method for forming the same. Background technique [0002] Shielded gate field effect transistor (Shielded Gate Trench, SGT), because of its low gate-drain capacitance Cgd, low on-resistance, and high withstand voltage performance, which is more conducive to the flexible application of semiconductor integrated circuits. Specifically, in the shielded gate field effect transistor, by arranging the shielding electrode below the gate electrode, the gate-to-drain capacitance can be greatly reduced, and the drift region of the shielded gate field effect transistor also has higher impurity carriers concentration, which can provide additional benefits to the breakdown voltage of the device, and correspondingly lower on-resistance. [0003] Compared with other trench field effect transistors, although the shielded gate field ef...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66477H01L29/78
Inventor 丛茂杰谢志平冀亚欣宋金星
Owner 中芯先锋集成电路制造(绍兴)有限公司
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