Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of LDMOS device and LDMOS device

A device and substrate technology, which is used in the preparation of LDMOS devices and the field of LDMOS devices, can solve problems such as the inability to meet the requirements of switching tube applications.

Pending Publication Date: 2020-07-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the BCD process, although LDMOS devices are integrated in the same chip as CMOS devices, due to the high breakdown voltage (Breakdown Voltage, BV) and low characteristic on-resistance R sp (Specific on-Resistance) There is a contradiction in the pursuit. In the design of the device, it is usually necessary to adjust the breakdown voltage and R according to the requirements. sp Compromises and compromises, so often fail to meet switching tube application requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of LDMOS device and LDMOS device
  • Preparation method of LDMOS device and LDMOS device
  • Preparation method of LDMOS device and LDMOS device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] The technical solutions in the present application will be described clearly and completely in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of them. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of this application.

[0047] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the application and simplifying the description, and does not indicate or imply that the pointed device or element must have a specific orientation or a specific orientation. Th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of an LDMOS device and the LDMOS device. The method comprises the steps that after an insulating dielectric layer is formed on a substrate comprising a first drift region, a predetermined region of the insulating dielectric layer is etched, the insulating dielectric layer in the predetermined region on the substrate is removed, the substrate and the predetermined region of the first drift region are exposed, and a stepped structure is formed on one side of the insulating dielectric layer; and a gate dielectric layer is formed on the substrate and the exposed region of the first drift region, and the bottom surfaces of the gate dielectric layer and the insulating dielectric layer are located on the same horizontal plane to form a gate, a well region and a heavily doped region. In the preparation process of the LDMOS device, the bottom surfaces of the insulating dielectric layer and the gate dielectric layer are positioned on the same horizontal plane, so that the size of an accumulation region of the LDMOS device is reduced, and the characteristic on-resistance of the LDMOS device is reduced.

Description

Technical field [0001] This application relates to the technical field of semiconductor manufacturing, and in particular to a method for preparing an LDMOS device and an LDMOS device. Background technique [0002] Double-diffused Metal-Oxide Semiconductor (DMOS) devices are currently widely used in power management chips due to their high voltage resistance, high current drive capability, and extremely low power consumption. For lateral double-diffused metal-oxide semiconductor (LDMOS) devices in DMOS devices, on-resistance is an important indicator. [0003] The BCD (Bipolar-CMOS-DMOS) process is a process for fabricating Bipolar Junction Transistor (BJT) devices, Complementary Metal-Oxide Semiconductor (CMOS) devices and DMOS devices on the same chip (Die). In the BCD process, although LDMOS devices and CMOS devices are integrated in the same chip, due to the high breakdown voltage (Breakdown Voltage, BV) and low characteristic on-resistance R sp (Specific on-Resistance) There i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336H01L29/06H01L29/423H01L29/78
CPCH01L29/7816H01L29/42364H01L29/42356H01L29/0653H01L29/66681
Inventor 许昭昭
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP