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Oxidation resistant protective layer in chamber conditioning

A protective layer, pre-conditioning technology, applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of film adhesion deterioration, film shrinkage, film peeling and other problems

Pending Publication Date: 2020-07-24
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In some cases, oxygen-enriched plasma exacerbates film peeling because firstly it may cause the accumulated film to shrink, leading to higher tension, and secondly, it may consume carbon species in the accumulated film and thus cause film sticking further deterioration of sex

Method used

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  • Oxidation resistant protective layer in chamber conditioning
  • Oxidation resistant protective layer in chamber conditioning
  • Oxidation resistant protective layer in chamber conditioning

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Embodiment Construction

[0013] The following description includes systems, methods, techniques, instruction sequences, and computer program products that implement illustrative embodiments of the invention. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the exemplary embodiments. It will be apparent, however, to one skilled in the art that the inventive subject matter may be practiced without these specific details.

[0014] Portions of the disclosure of this patent document may contain material that is subject to copyright protection. The copyright owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure as it appears in the Patent and Trademark Office patent files or records, but otherwise reserves all copyright rights. The following statement applies to any data described below and in the drawings that form part of this document: Copyright Lam R...

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Abstract

In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

Description

[0001] priority claim [0002] This patent application claims the benefit of priority to U.S. Provisional Patent Application Serial No. 62 / 595,948, filed December 7, 2017, the entire contents of which are hereby incorporated by reference. technical field [0003] The present disclosure relates generally to processing and conditioning cycles in wafer processing chambers, and more particularly to defect reduction and batch size expansion by utilizing oxidation resistant protective layers in wafer processing and chamber conditioning operations. Background technique [0004] The background description provided herein is for the purpose of generally presenting the context of the disclosure. The work of the presently identified inventors described in this Background section and in aspects not identified as prior art at the time of filing of the application is neither expressly nor impliedly admitted to be prior art to the present disclosure. . [0005] Over time, repeated wafer ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/56H01L21/67H01L21/66C23C16/455
CPCC23C16/401C23C16/4404C23C16/455C23C16/505H01J37/32522H01J37/32816H01L21/02274H01L21/0262H01L21/02167H01L21/56H01L21/67017H01L22/12H01L22/24C23C16/45536
Inventor 赖锋源龚波袁光璧许晨华巴德里·瓦拉达拉简
Owner LAM RES CORP