Cleaning method of target material

A technology of target material and cleaning agent, applied in the cleaning method using liquid, cleaning method using gas flow, cleaning method and utensils, etc., can solve the problem of affecting the sputtering effect, scratches on the sputtering surface, and difficulty in guaranteeing the surface finish of the product and other problems to achieve the effect of improving the cleaning effect and improving the finish

Pending Publication Date: 2020-07-28
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the conventional cleaning technology adopted seriously scratches the sputtering surface, and

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cleaning method of target material
  • Cleaning method of target material
  • Cleaning method of target material

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] At present, conventional target cleaning techniques, such as manual cleaning with a cleaning cloth, are not only difficult to ensure cleanliness, but also the cleaning cloth creates friction on the surface of the product, which easily scratches the surface of the product and makes the surface of the target not flat enough. It is smooth and can not meet the requirements of sputtering process.

[0025] In order to overcome the above shortcomings, the inventor conducted research and found that spraying a cleaning agent on the surface of the target material for cleaning, no friction occurs during the cleaning process, and effectively solves the problem of surface scratches caused by the target material during the cleaning process. Improve the surface finish of the target material; and the cleaning effect can be improved by adjusting various parameters during spraying.

[0026] In order to make the above-mentioned objectives, features and beneficial effects of the present inventi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A cleaning method of a target material comprises the following steps that the target material is provided; and spray cleaning is carried out on the target material. A cleaning agent is sprayed to thesurface of the target material to achieve cleaning, no friction is generated in the cleaning process, the problem that surface scratches are caused to the target material in the cleaning process is effectively solved, and the smoothness of the surface of the target material is improved. Furthermore, high-pressure gas can be sprayed to the surface of the target material, the cleaning agent is blownand dried, meanwhile, dirt is taken away, and therefore the cleaning effect is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for cleaning a target. Background technique [0002] In recent years, semiconductor technology has developed rapidly. With the miniaturization and miniaturization of semiconductor devices, the requirements for the size and quality of the coating film formed on the semiconductor chip are also getting higher and higher. As we all know, among the various coating methods currently used, the effect of sputtering coating is better than other coating methods, and the coating formed by sputtering coating is more uniform, strong and excellent in performance. [0003] The principle of sputtering coating is to bombard the target with accelerated ions, so that the components on the surface of the target are sputtered out in the form of atomic groups or ions, and deposited on the surface of the substrate to form a coating. During the sputtering coating process, o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B08B3/02B08B5/02B08B13/00
CPCB08B3/022B08B5/023B08B13/00
Inventor 姚力军潘杰王学泽魏小林
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap