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A kind of high energy storage density temperature stability plzt antiferroelectric ceramic material and preparation method thereof

A technology of high energy storage density and ceramic materials, applied in the field of high energy storage density temperature stability PLZT antiferroelectric ceramic materials and its preparation, can solve the problem of inability to accurately reflect the energy storage temperature stability of antiferroelectric materials, and cannot represent The energy storage characteristics of antiferroelectric materials and other issues have achieved good application prospects, excellent temperature stability, and the effect of improving temperature stability

Active Publication Date: 2021-06-15
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the phase change energy storage characteristics of antiferroelectric materials, they have significant dielectric nonlinearity, and the dielectric constant measured under small signal cannot represent the energy storage characteristics of antiferroelectric materials. This method cannot accurately reflect the properties of antiferroelectric materials. Energy storage temperature stability

Method used

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  • A kind of high energy storage density temperature stability plzt antiferroelectric ceramic material and preparation method thereof
  • A kind of high energy storage density temperature stability plzt antiferroelectric ceramic material and preparation method thereof
  • A kind of high energy storage density temperature stability plzt antiferroelectric ceramic material and preparation method thereof

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Effect test

Embodiment 1

[0055] A high energy storage density PLZT antiferroelectric ceramic material, its chemical composition conforms to the general formula: Pb 1-1.5x La x Zr 1- y Ti y o 3 , x=0.12, y=0. The above-mentioned PLZT antiferroelectric ceramic material is prepared by a common solid phase method, including the following steps:

[0056] (1) Pb with a purity higher than 99% 3 o 4 , La 2 o 3 , ZrO 2 、TiO 2 as raw material;

[0057] (2) Weighing according to the stoichiometric ratio of the above chemical formula, using wet roller milling to mix the materials, using zirconia balls as the ball milling medium, mixing 24h according to the weight ratio of material: ball milling medium: ethanol=1:5:0.8, at 70 Dry at ℃;

[0058] (3) Calcining the dried powder at 950°C for 2 hours;

[0059] (4) Finely grind the calcined powder, use zirconia balls as the ball milling medium, and use stirring mill to finely grind, material: ball milling medium: ethanol = 1:8:0.7, ball milling time 3h, di...

Embodiment 2

[0067] A high energy storage density PLZT antiferroelectric ceramic material, its chemical composition conforms to the general formula: Pb 1-1.5x La x Zr 1- y Ti y o 3 , x=0.12, y=0.06. The above-mentioned PLZT antiferroelectric ceramic material is prepared by a common solid phase method, including the following steps:

[0068] (1) Pb with a purity higher than 99% 3 o 4 , La 2 o 3 , ZrO 2 、TiO 2 as raw material;

[0069] (2) Weighing according to the stoichiometric ratio of the above chemical formula, using wet roller milling to mix the materials, using zirconia balls as the ball milling medium, mixing 24h according to the weight ratio of material: ball milling medium: ethanol=1:5:0.8, at 70 Dry at ℃;

[0070] (3) Calcining the dried powder at 950°C for 2 hours;

[0071] (4) Finely grind the calcined powder, use zirconia balls as the ball milling medium, and use stirring mill to finely grind, material: ball milling medium: ethanol = 1:8:0.7, ball milling time 3h,...

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Abstract

The invention discloses a PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and a preparation method thereof. The chemical composition of the PLZT antiferroelectric ceramic material is Pb 1‑1.5x La x Zr 1‑ y Ti y o 3 , where, 0.10≤x≤0.15, 0≤y≤0.08.

Description

technical field [0001] The invention belongs to the technical field of functional ceramic materials, and in particular relates to a PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and a preparation method thereof. Background technique [0002] Pulse power technology refers to the electrophysical technology that slowly inputs low-power energy into energy storage equipment for a long time, and then releases it to the load with extremely high power in a very short period of time. It has been widely used in high-tech, civil and other fields. Applications. Energy storage capacitor energy storage element has the advantages of fast energy release, large output power, flexible combination, mature technology, and low price, and has become the most widely used energy storage element at present. However, due to the low energy storage density of the existing organic film capacitors, the energy storage capacitors in the equipment accoun...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/50C04B35/491C04B41/81
CPCC04B35/491C04B35/50C04B41/009C04B41/4505C04B41/81C04B2235/3227C04B2235/6562C04B2235/6567C04B2235/96C04B41/4501
Inventor 闫世光曹菲陈学锋王根水董显林
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI