Infrared detector and preparation method thereof

An infrared detector and detector technology, applied in the field of infrared detection, can solve the problems of poor infrared absorption rate of infrared detectors, poor sensitivity of infrared detectors, etc., and achieve the effects of increased intensity, improved absorption rate, and good absorption characteristics

Active Publication Date: 2020-08-11
BEIJING NORTH GAOYE TECH CO LTD
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Problems solved by technology

[0003] At present, non-contact infrared detectors, such as non-contact temperature sensors, absorb infrared radiation in the band of 8 microns to 14 microns, that is, the infrared absorption spectrum mostly shows a high absorption rate in the band of 8 microns to 14 microns. The infrared absorption within the band range only accounts for about 37% of the total emissivity of the target, and a large part of the infrared radiation cannot be absorbed by the infrared detector, resulting in poor infrared absorption rate of the infrared detector and poor sensitivity of the infrared detector

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  • Infrared detector and preparation method thereof
  • Infrared detector and preparation method thereof
  • Infrared detector and preparation method thereof

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[0066] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0067] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0068] figure 1 It is a schematic diagram of a three-dimensional structure of an infrared detector provided by an embodiment of the present disclosure, figure 2 A schematic diagram of a three-dimensional structure of a detector pixel provided by an embodiment of the present disclosure, image...

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Abstract

The invention relates to an infrared detector and a preparation method thereof. The infrared detector comprises a plurality of detector pixels arranged in an array, wherein each detector pixel comprises an electrode layer, the electrode layer is provided with a plurality of patterned hollow-out structures arranged in an array, the patterned hollow-out structures are in an open circular ring shape,and the infrared absorption spectrum section of the infrared detector is a wave band of 3 microns to 30 microns. By means of the technical scheme, wide-spectrum absorption of the infrared detector isachieved, so that the absorptivity of the infrared detector to temperature infrared radiation energy of a target object is greatly improved so as to make the infrared detector have high detection sensitivity.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector and a preparation method thereof. Background technique [0002] Non-contact infrared detectors include, for example, non-contact temperature measurement sensors. The detection principle is that the infrared detector converts the infrared radiation signal emitted by the target object to be measured into a heat signal, and converts the heat signal into an electrical signal through the detector sensitive element, and then The electrical signal is processed and output through the circuit chip. The absorption value of the infrared radiation signal by the infrared detector is very important as the initial signal of the infrared detector. The larger the signal value, the higher the sensitivity of the infrared detector. A very important parameter for the performance of the device. [0003] At present, non-contact infrared detectors, such as non-...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L37/02H01L27/16G01J5/12
CPCG01J5/12G01J2005/123H10N19/00H10N15/10
Inventor 魏斌翟光杰翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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