Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metrology systems and methods for determining properties of one or more structures on a substrate

A measurement and characteristic technology, applied in the field of measurement systems or inspection systems, to solve the problems of unmanufacturable optical components and expensive optical components

Active Publication Date: 2022-06-21
ASML NETHERLANDS BV
View PDF17 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This may result in optics that cannot be manufactured, or may result in optics that become too expensive for metrology equipment or inspection equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metrology systems and methods for determining properties of one or more structures on a substrate
  • Metrology systems and methods for determining properties of one or more structures on a substrate
  • Metrology systems and methods for determining properties of one or more structures on a substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In this document, the terms "radiation" and "beam" are used to cover all types of electromagnetic radiation, including ultraviolet radiation (for example having a wavelength of 365 nm, 248 nm, 193 nm, 157 nm or 126 nm) and extreme ultraviolet radiation (EUV, for example having wavelengths in the range of about 5-100 nm).

[0023] The terms "reticle", "mask" or "patterning device" as used herein may be interpreted broadly to refer to a general patterning device that can be used to impart a patterned cross-section to an incident radiation beam, the pattern The cross-section of V corresponds to the pattern to be produced in the target portion of the substrate. The term "light valve" can also be used in this context. Besides classical masks (transmissive or reflective; binary, phase-shifted, hybrid, etc.), examples of other such patterning devices include programmable mirror arrays and programmable LCD arrays.

[0024] figure 1 A lithographic apparatus LA is schematicall...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
reflectanceaaaaaaaaaa
Login to View More

Abstract

A metrology system, and associated method, for determining a property of interest associated with at least one structure on a substrate is described. The metrology system includes a processor configured to computationally determine phase and amplitude information from a characteristic of the detected scattered radiation as a result of illuminating the at least one structure with illumination radiation in a measurement acquisition. As a result, the scattered radiation has been reflected or scattered by the at least one structure, and the processor is configured to use the determined phase and amplitude to determine a property of interest.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of European application 17194905.0 filed on October 5, 2017, European application 17199764.6 filed on November 2, 2017 and European application 17206967.6 filed on December 13, 2017, which are incorporated by reference in their entirety Incorporated into this article. technical field [0003] The invention relates to a metrology or inspection system for determining properties of a plurality of structures on a substrate. The invention also relates to a method for determining properties of a plurality of structures on a substrate. Background technique [0004] A lithographic apparatus is a machine configured to apply a desired pattern to a substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithographic apparatus can, for example, project a pattern (also often referred to as a "design layout" or "design") at a patterning d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01B11/24G03F7/20
CPCG01B11/24G03F7/20G03F7/705G01B11/02G01B11/0625G01B2210/56G03F7/70625G03F7/7085G01N21/4788G01N21/9501G03F7/70158G03F7/70633G03F9/7088G01B11/25
Inventor P·A·J·蒂内曼斯A·J·登博夫A·E·A·科伦N·潘迪V·T·滕纳W·M·J·M·考恩帕特里克·沃纳阿
Owner ASML NETHERLANDS BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com