TDICCD image sensor with uniform imaging

Abstract

The invention discloses a TDICCD image sensor with uniform imaging. The sensor comprises a TDICCD array, the TDICCD array comprises a plurality of pixel structures, each pixel structure comprises a substrate and a vertical CCD structure arranged on the substrate, the vertical CCD structures are used for transmitting photo-generated signals, and an anti-corona structure is arranged between every two adjacent vertical CCD structures; the vertical CCD structures comprise first vertical CCD driving phases, second vertical CCD driving phases, third vertical CCD driving phases and fourth vertical CCD driving phases, a blocking barrier structure is arranged between every two adjacent fourth vertical CCD driving phases, and the blocking barrier structures are arranged around the anti-corona structures in a surrounding mode; and non-uniform injection buried trench structures are arranged between the substrate and the vertical structures, so that a halo phenomenon is prevented, an electric leakage channel can be effectively prevented, and the uniform imaging of the TDICCD can be realized.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a TDICCD image sensor with uniform imaging. Background technique [0002] As an important branch of CCD technology, TDICCD technology has obvious advantages in the field of satellite applications. It has been widely used in aerospace because of its functions of improving light response sensitivity and signal-to-noise ratio, eliminating image motion, and changing exposure time by selecting TDI series. Remote sensing and high-altitude reconnaissance are spaceborne and airborne core devices for image acquisition and target recognition. At present, most remote sensing satellite reconnaissance cameras and aerial reconnaissance cameras in orbit and under research in various countries in the world use TDICCD. [0003] However, when TDICCD is irradiated by strong light in practical applications, halo phenomenon will appear, that is, there are bright spots in the imaged image, a whi...

AI Technical Summary

Problems solved by technology

The anti-halation structure is composed of anti-halation barrier and anti-halation leakage, but due to the effect of anti-halation leakage, the height of the anti-halation barrier under the level gate of TDICCD will be pulled higher than the level of the level gate The off barrier phase potential of the off gate (about 0V), so that a leakage channel appears in this area, when the light intensity irradiated on the pixel reaches or exceeds the height of the anti-halation barrier of the pixel When the well capacity of the picture element is full, part of the excess light-generated signal generated is drawn away by the anti-halation leakage, and the other part will enter the next adjacent picture element through the leakage channel, resulting in uneven imaging

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