Silicon carbide MOSFET device and manufacturing method thereof

Abstract

The invention provides a silicon carbide MOSFET device and a manufacturing method thereof. The method comprises the following steps of providing a substrate with a first doping type; forming a patterned first barrier layer on the first surface of the substrate; forming a source region with a first doping type in the substrate through the first barrier layer, forming a base region of a second doping type and a contact region of the second doping type in the substrate, and forming a gate structure, wherein the first barrier layer comprises a first portion and a second portion, the first portioncomprises a semiconductor layer and a removable layer different from the semiconductor layer, and the second portion only comprises the removable layer. According to the manufacturing method providedby the invention, in the step of forming the contact region, the removable layer can be completely removed, and a mask for realizing self-aligned injection of the contact region does not need to be independently formed, so that the manufacturing cost is saved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more particularly, to a silicon carbide MOSFET device and a method for manufacturing the silicon carbide MOSFET device. Background technique [0002] In the field of SiC MOSFET, in order to reduce the cell size and increase the current density, the length of the channel should be set as short as possible. Considering the influence of lithography precision, the channel with a length less than 0.5um generally uses a self-alignment process accomplish. Due to the low diffusion coefficient of SiC, it is impossible to use the Si standard self-alignment process to form a channel. The existing SiC MOSFET channel self-alignment process first uses polysilicon after photolithography as the barrier layer of the P-type base region to form a P-type base region. After forming the base region, the polysilicon is oxidized, and the polysilicon will form a certain thickness of silicon dioxide on...

AI Technical Summary

Problems solved by technology

In addition, when forming the P+ contact region, because the ion implantation dose of the N+ source region is much larger than the P+ contact region, a separate mask is required to form the barrier layer of the P+ contact region, which increases the manufacturing cost.

Images