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Semiconductor process equipment

A process equipment and semiconductor technology, applied in semiconductor/solid-state device manufacturing, metal material coating process, gaseous chemical plating, etc. tonal effect

Active Publication Date: 2020-08-28
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to propose a semiconductor process equipment that can solve the problem of uneven temperature field

Method used

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  • Semiconductor process equipment
  • Semiconductor process equipment
  • Semiconductor process equipment

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Embodiment Construction

[0034] The present invention will be described in more detail below with reference to the accompanying drawings. Although preferred embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0035] An embodiment of the present invention provides a semiconductor process equipment, including a process chamber, a heating device is arranged in the process chamber, figure 1 A schematic diagram of the internal structure of the process chamber is shown. figure 2 shows a partial structural schematic diagram of the heating device, please refer to figure 1 and figure 2 , the heating device includes:

[0036] The central lamp holder 4 and the edge lamp holder 41 arranged around...

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Abstract

The invention discloses semiconductor process equipment, which comprises a process chamber, wherein a heating device is arranged in the process chamber. The heating device comprises a central lamp holder, an edge lamp holder arranged around the central lamp holder, a central heating lamp, a cooling fin, a reflection cylinder and a plurality of edge heating lamps, wherein the central heating lamp is mounted on the central lamp holder; the cooling fin is connected with the central lamp holder and arranged on the periphery of the central heating lamp; the reflection cylinder is connected with theend, which is away from the central lamp holder, of the cooling fin and arranged on the periphery of the central heating lamp, and an opening is formed in the end, which is away from the cooling fin,of the reflection cylinder; and the plurality of edge heating lamps are arranged on the edge lamp holder and surround the central heating lamp. According to the invention, the auxiliary heating device is additionally arranged in the chamber, so that the compensation of the inner zone temperature field of the base can be realized, and the uniformity of the whole temperature field of the base is improved.

Description

technical field [0001] The present invention relates to the field of semiconductor equipment, and more specifically, to a semiconductor process equipment. Background technique [0002] Chemical vapor deposition epitaxial growth is to transport the reaction gas to the reaction chamber, and react it by heating, etc., and the growth atoms are deposited on the substrate to grow a single crystal layer. The heating system plays an extremely important role in silicon epitaxy equipment. The heating system is mainly composed of an infrared halogen heating lamp and a gold-plated reflective screen. The infrared rays emitted by the heating lamp are irradiated on the graphite tray through the reflection of the gold-plated parts, and the tray is heated. A uniform temperature field is formed to uniformly heat the wafer on the tray to grow an epitaxial layer with uniform resistivity. [0003] In the existing heating system, the infrared rays emitted by the heating lamp are irradiated on th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67C23C16/54C23C16/46
CPCH01L21/67115H01L21/67207C23C16/54C23C16/46Y02P70/50
Inventor 孙中岳袁福顺
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD