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A mxene/c based 3 no 4 Photonic diode with material composite structure and its preparation method and application

A technology of C3N4 and composite structure, which is applied in optics, optical components, instruments, etc., can solve the problems of few reports on the application of spatial self-phase modulation, and achieve the effects of overcoming electromagnetic interference, enriching types, and reducing energy consumption

Active Publication Date: 2021-09-24
SHENZHEN HANGUANG TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The second type of photonic diode uses the method of spatial self-phase modulation to study the nonlinear characteristics of materials, which has aroused strong interest of researchers, and related reports are also emerging, but there are few reports on the application of spatial self-phase modulation.

Method used

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  • A mxene/c based <sub>3</sub> no <sub>4</sub> Photonic diode with material composite structure and its preparation method and application
  • A mxene/c based <sub>3</sub> no <sub>4</sub> Photonic diode with material composite structure and its preparation method and application
  • A mxene/c based <sub>3</sub> no <sub>4</sub> Photonic diode with material composite structure and its preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0039] Please refer to figure 2 , figure 2 The MXene / C-based 3 N 4 Photonic diode with material composite structure, including front Mxene layer and reverse C 3 N 4 layer, among them, the front Mxene layer and the reverse C 3 N 4 The layers are all set as light-transmitting layers. Front Mxene layer and reverse C 3 N 4 The layers are stacked together to form an MXene / C-based 3 N 4 A photonic diode with a material composite structure, MXene is a type of two-dimensional material with strong nonlinear response characteristics. It has excellent nonlinear response characteristics in the light transmission process with a wavelength of 532-671nm. Absorbent material C 3 N 4 Combining them together can break the time-reversal symmetry and realize the non-reciprocal propagation of light.

[0040] The MXene / C based 3 N 4 In the photonic diode with composite structure, the front Mxene layer is MXene / PMMA film, and the reverse C 3 N 4 Layer is C 3 N 4 / PMMA film, combi...

Embodiment 2

[0046] A specific embodiment of the invention also provides in embodiment 1 based on MXene / C 3 N 4 Preparation method of composite structured photonic diode. The specific preparation process is as follows: provide the front Mxene layer and the reverse C 3 N 4 layer, combine the front Mxene layer with the reverse C 3 N 4 The layers are stacked together to get an MXene / C-based 3 N 4 Photonic diodes in material composite structures. Among them, the front Mxene layer is MXene / PMMA film, and the reverse C 3 N 4 Layer is C 3 N 4 / PMMA film.

[0047] In a specific embodiment, MXene / PMMA film and C 3 N 4 The preparation process of / PMMA film comprises the following steps:

[0048] (1) Centrifuge the two-dimensional material and dry it in a vacuum drying oven, where the two-dimensional material is a two-dimensional Mxene material or a two-dimensional C 3 N 4 Material;

[0049] (2) Add chloroform (chloroform) to the dried two-dimensional material, and ultrasonically disp...

Embodiment 3

[0057] Please refer to Figure 4 , Figure 4 The MXene / C-based 3 N 4 Photonic diode with material composite structure, including front Mxene layer and reverse C 3 N 4 layer, among them, the front Mxene layer and the reverse C 3 N 4 The layers are all set as light-transmitting layers. Front Mxene layer and reverse C 3 N 4 The layers are stacked together to form an MXene / C-based 3 N 4 Photonic diodes in material composite structures. In this embodiment, the front Mxene layer includes a cuvette and the Mxene-ethanol dispersion contained in the cuvette, and the reverse side C 3 N 4 The layer includes the cuvette and the C contained in the cuvette 3 N 4 - Ethanol dispersion. The specific preparation process is as follows: first, Mxene-ethanol dispersion and C 3 N 4 -The ethanol dispersion is filled into two 5mm thick cuvettes respectively, and then the two cuvettes are placed close together to form a composite structure, that is, based on MXene / C 3 N 4 Photonic d...

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Abstract

The present invention provides a kind of MXene / C-based 3 N 4 Photonic diode with composite structure of materials, including front-side Mxene layer and reverse-side C 3 N 4 layer, the front side Mxene layer and the back side C 3 N 4 layers are stacked together; the Mxene layer on the front side and the C on the back side 3 N 4 The layers are all set as light-transmitting layers. The present invention is based on MXene / C 3 N 4 The photonic diode of the material composite structure realizes the non-reciprocal propagation of light, and has the advantages of simple structure, low cost, and strong operability. The present invention also provides MXene / C-based 3 N 4 A preparation method of a photonic diode of a material composite structure and its application in the field of optical quantum computing.

Description

technical field [0001] The invention relates to the field of photonic devices, in particular to an MXene / C-based 3 N 4 The photon diode of material composite structure, the present invention also relates to based on MXene / C 3 N 4 Preparation method of photonic diode with material composite structure and the MXene / C based 3 N 4 Applications of photonic diodes with material composite structures in the field of optical quantum computing. Background technique [0002] Since the discovery of graphene materials, various two-dimensional materials with unique and novel properties have been discovered and reported one after another, including two-dimensional MXene nanomaterials. MXene is not a material, but a general term for a series of materials. It has been reported There are more than 70 kinds of MXene materials, which do not exist naturally, but are obtained by chemical means from MAX phase materials, and the general formula is M n+1 AX n , where M represents a transition...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/00
CPCG02B1/00
Inventor 李金瑛吴雷明康建龙
Owner SHENZHEN HANGUANG TECH CO LTD