Transistor, three dimensional memory device including such transistor and method of fabricating such memory device

Abstract

The invention discloses a transistor, a three dimensional memory device including such transistors and a method of fabricating such memory device. The transistor according to the invention includes apillar of a semiconductor material, extending in a normal direction of a semiconductor substrate, a gate dielectric layer and a gate conductor. The pillar of the semiconductor material has a base sideface parallel to the normal direction, a tapered side face opposite to the base side face, a top face perpendicular to the normal direction, a bottom face opposite to the top face, a front side faceadjacent to the base side face and the tapered side face, and a rear side face opposite to the front side face. A first elongated portion, sandwiched among the base side face, the front side face, thebottom face and the top face, forms a source region. A second elongated portion, sandwiched among the base side face, the rear side face, the bottom face and the top face, forms a drain region. A plate portion, on the base side face and between the first elongated portion and the second elongated portion, forms a channel region. Other portion of the pillar forms a body region. The gate dielectriclayer is formed to overlay the base side face of the pillar of the semiconductor material. The gate conductor is formed to overlay the gate dielectric layer.

Description

technical field [0001] The invention relates to a transistor, a three-dimensional memory element including the transistor and a method for manufacturing the memory element, in particular to a novel transistor, a three-dimensional memory element including the transistor and a method for manufacturing the memory element. Background technique [0002] see figure 1 and figure 2 , these figures schematically depict a vertical current mode fan-shaped field effect transistor (fan-shaped field effect transistor, FanFET) 1 disclosed by US Patent Application Publication No. 2019123060A1. figure 1 It is an external view of the vertical current mode sector field effect transistor 1 . figure 2 yes figure 1 A cross-sectional view of a medium vertical current mode Sector Field Effect Transistor 1 along line A-A. [0003] Such as figure 1 and figure 2 As shown, the conventional vertical current mode sector field effect transistor 1 includes a pillar 10 formed of semiconductor mater...

AI Technical Summary

Problems solved by technology

[0006] However, vertical current mode Sector Field Effect Transistors cannot be used for three-dimensional memory elements that require current flow in the horizontal direction

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