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A kind of diamond wire for cutting photovoltaic large-size silicon wafer and its manufacturing method

A manufacturing method and technology of diamond wire, applied in the direction of manufacturing tools, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems such as the increase of TTV defective ratio, and achieve the effects of reducing the probability of adhesion and reunion, fixing firmly, and improving stability

Active Publication Date: 2022-07-05
杨凌美畅新材料股份有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the cutting problems such as the line marks and the increase of TTV defect ratio when the diamond wire prepared by the prior art cuts photovoltaic large-size silicon wafers, and improve the cutting yield of photovoltaic large-size silicon wafers, the present invention discloses a method for cutting photovoltaic large-size silicon wafers. Diamond wire for sheet and manufacturing method thereof

Method used

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  • A kind of diamond wire for cutting photovoltaic large-size silicon wafer and its manufacturing method
  • A kind of diamond wire for cutting photovoltaic large-size silicon wafer and its manufacturing method

Examples

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Effect test

Embodiment 1

[0049] like figure 1As shown, this embodiment provides a manufacturing method of diamond wire for cutting photovoltaic large-size silicon wafers, which includes the following steps: (1) pretreatment, processing the diamond fine powder and the busbar; (2) preplating, electroplating on the surface of the busbar A layer of nickel coating; (3) Sanding, using the principle of composite electroplating to fix the diamond powder on the busbar; (4) Thickening, continue to electroplate the nickel coating to make the diamond powder firmly fixed; (5) After treatment, the diamond powder made of Line for cleaning and aging treatment.

[0050] Wherein, in step (1), the diamond micropowder is treated by modifying the diamond micropowder, which can improve the sand-loading ability of the diamond micropowder and reduce the adhesion and agglomeration probability of the diamond micropowder. The specific treatment method includes: first, put the diamond micropowder coated with a high phosphorus n...

Embodiment 2

[0058] like figure 1 As shown, this embodiment provides a manufacturing method of diamond wire for cutting photovoltaic large-size silicon wafers, which includes the following steps: (1) pretreatment, processing the diamond fine powder and the busbar; (2) preplating, electroplating on the surface of the busbar A layer of nickel coating; (3) Sanding, using the principle of composite electroplating to fix the diamond powder on the busbar; (4) Thickening, continue to electroplate the nickel coating to make the diamond powder firmly fixed; (5) After treatment, the diamond powder made of Line for cleaning and aging treatment.

[0059] Wherein, in step (1), the diamond micropowder is treated by modifying the diamond micropowder, which can improve the sand-loading ability of the diamond micropowder and reduce the adhesion and agglomeration probability of the diamond micropowder. The specific treatment method includes: first, put the diamond micropowder coated with a high phosphorus ...

Embodiment 3

[0067] like figure 1 As shown, this embodiment provides a manufacturing method of diamond wire for cutting photovoltaic large-size silicon wafers, which includes the following steps: (1) pre-treatment, processing the diamond fine powder and the busbar; (2) pre-plating, electroplating on the surface of the busbar A layer of nickel coating; (3) sanding, using the principle of composite electroplating to fix the diamond powder on the busbar; (4) thickening, continue to electroplate the nickel coating to make the diamond powder firmly fixed; (5) post-processing, the diamond powder made Line for cleaning and aging treatment.

[0068] Wherein, in step (1), the diamond micropowder is treated by modifying the diamond micropowder, which can improve the sand-loading ability of the diamond micropowder and reduce the adhesion and agglomeration probability of the diamond micropowder. The specific treatment method includes: first, put the diamond micropowder coated with a high phosphorus n...

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Abstract

The invention discloses a diamond wire for cutting photovoltaic large-size silicon wafers and a manufacturing method thereof. The manufacturing method is specifically as follows: step (1) pretreatment, processing diamond fine powder and busbar; step (2) pre-plating, on the busbar A layer of nickel coating is electroplated on the surface; in step (3), sand is applied, and the diamond powder is fixed on the busbar by the principle of composite electroplating; in step (4), the thickness is increased, and the nickel coating is continued to be electroplated to make the diamond powder firmly fixed; in step (5) post-processing, The finished diamond wire is cleaned and aged. The diamond wire manufactured by the invention can realize stable cutting of large-scale photovoltaic silicon wafers, control the ratio of wire marks and TTV defects to 0.5% to 4%, and the slicing yield rate is not less than 97%.

Description

technical field [0001] The invention belongs to the field of hard and brittle material cutting and processing, in particular to a diamond wire for cutting photovoltaic large-size silicon wafers and a manufacturing method thereof. Background technique [0002] With the development of the photovoltaic industry, in order to reduce production costs, the size of silicon wafers has been increasing, gradually increasing from 100mm to 156.75mm, and then to the 166mm and 210mm size products launched in 2019. Large photovoltaic silicon wafers will be the development of the photovoltaic industry. The mainstream route, the market share of 210mm size silicon wafers will gradually expand. [0003] With the continuous expansion of the size of silicon wafers, the supporting cutting equipment and cutting technology are constantly updated, and the traditional mortar cutting has been completely replaced by the electroplated diamond wire multi-wire cutting technology. Compared with mortar cutt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D15/00C25D7/06C25D3/12C25D5/14C25D5/50C25D21/00C23C18/32B28D5/04
CPCC25D15/00C25D7/0607C25D3/12C25D5/14C25D5/50C25D21/00C23C18/32B28D5/0058B28D5/045Y02P70/50
Inventor 郭金城闫泽鹏郭强刘海涛
Owner 杨凌美畅新材料股份有限公司