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A kind of sputtering target material welding method

A technology of sputtering target material and welding method, applied in welding equipment, non-electric welding equipment, metal processing equipment and other directions, can solve the problems of high cost of sputtering target material and low production efficiency of sputtering target material, and achieves cost reduction, High welding rate and the effect of ensuring welding quality

Active Publication Date: 2021-08-03
ZHEJIANG SAXUM SEMICON TECHNOLOGYCO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to address the above-mentioned defects in the prior art, and to provide a sputtering target welding method, which solves the problem of high cost of the existing integrated sputtering target, and also solves the problem of sputtering target welding. The problem of low material production efficiency

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  • A kind of sputtering target material welding method

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Effect test

Embodiment 1

[0029] A sputtering target welding method provided by the invention, such as figure 1 As shown, it is implemented by the following devices, including: a sputtering target 1, a back plate 2 and a friction stir welding machine, and the sputtering target welding method includes the following steps:

[0030] First, set the distance between the sputtering target 1 and the welding joint of the back plate 2 to 1mm;

[0031] Then weld by the friction stir welding machine, the rotary cutter on the friction stir welding machine is inserted in the welding junction, the insertion depth of the rotary cutter is 3mm, and the rotary cutter rotates for welding, and when the rotary cutter rotates and welds, the sputtering target 1 and The backplane 2 rotates synchronously.

[0032] The welding success rate of the welding method of this embodiment is 98% on average, while the success rate of the welding method in the prior art is 40% on average. The present invention can weld the sputtering tar...

Embodiment 2

[0034] A sputtering target welding method provided by the invention comprises the following steps:

[0035] First, the distance between the sputtering target 1 and the back plate 2 is set to 0.2mm;

[0036] Then weld by the friction stir welding machine, the rotary cutter on the friction stir welding machine is inserted in the welding junction, the insertion depth of the rotary cutter is 10mm, the rotary cutter rotates for welding, when the rotary cutter rotates and welds, the sputtering target material 1 and The backplane 2 rotates synchronously.

[0037] And in this embodiment, the back plate 2 is made of aluminum alloy or copper alloy. The rotational speed at which the rotary cutter rotates is 500 rpm. The speed at which the sputtering target 1 and the back plate 2 rotate synchronously is 50 mm / min, and the welding temperature is slightly higher than 400° C.

[0038] The back plate 2 is made of aluminum or an aluminum alloy material, which can greatly reduce the cost of ...

Embodiment 3

[0045] A sputtering target welding method provided by the invention comprises the following steps:

[0046] First, the distance between the sputtering target 1 and the back plate 2 is set to 0.1mm;

[0047] Then weld by the friction stir welding machine, insert the rotary cutter on the friction stir welding machine into the welding joint, the insertion depth of the rotary cutter is 13mm, the rotary cutter rotates for welding, and when the rotary cutter rotates and welds, the sputtering target 1 and The backplane 2 rotates synchronously.

[0048] In addition, in this embodiment, the back plate 2 is made of aluminum alloy, and copper alloy can also be used. The rotational speed at which the rotary cutter rotates is 2000 rpm. The speed at which the sputtering target 1 and the back plate 2 rotate synchronously is 150 mm / min, and the welding temperature is 500° C.

[0049] The back plate 2 is made of aluminum alloy or copper alloy material, which can greatly reduce the cost of r...

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Abstract

The invention discloses a sputtering target welding method, which relates to the technical field of target welding. The sputtering target welding method is implemented by the following device, comprising: a sputtering target, a back plate and a friction stir welding machine; a sputtering target The material welding method comprises the following steps: firstly setting the distance between the sputtering target material and the welding junction of the back plate to be less than or equal to 1mm; , the insertion depth of the rotary cutter is 3-20mm, when the rotary cutter performs rotary welding, the sputtering target and the back plate rotate synchronously; the present invention saves the cost of making the sputtering target by using aluminum alloy or copper alloy for the back plate The cost of raw materials is low, and a high welding rate is guaranteed. The cost of large-scale production will also be reduced by using the welding method of the present invention, so that a low-cost sputtering target can be produced on a large scale, and then the target can be used for chip manufacturing. This greatly reduces the cost of chip manufacturing.

Description

technical field [0001] The invention relates to the technical field of target welding, in particular to a sputtering target welding method. Background technique [0002] Generally speaking, the sputtering target is mainly composed of the target blank, the back plate and other parts. Among them, the target blank is the target material bombarded by the high-speed ion beam and belongs to the core part of the sputtering target. During the sputtering coating process, the target After the blank is hit by ions, its surface atoms are scattered by sputtering and deposited on the substrate to form an electronic film; due to the low strength of high-purity metals, the sputtering target needs to be installed in a special machine to complete the sputtering process. The inside of the machine is a high-voltage, high-vacuum environment. Therefore, the ultra-high-purity metal sputtering target blank needs to be bonded to the back plate through different welding processes. The back plate main...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K20/12B23K20/26
CPCB23K20/122B23K20/26
Inventor 姚科科大岩一彦廣田二郎林智行山田浩
Owner ZHEJIANG SAXUM SEMICON TECHNOLOGYCO LTD