Semiconductor device including trench structure and manufacturing method

Abstract

The invention relates to a SiC semiconductor device including a trench structure and a manufacturing method. The semiconductor device includes a silicon carbide semiconductor body comprising a sourceregion of a first conductivity type and a body region of a second conductivity type; a trench structure extending from a first surface into the silicon carbide semiconductor body along a vertical direction, the trench structure comprising a gate electrode and a gate dielectric; and a contact electrically connected to the source region at the first surface, wherein the source region comprises a first source sub-region directly adjoining the contact at a source contact area of the first surface, a second source sub-region, and a third source sub-region.

Description

technical field [0001] The present disclosure relates to semiconductor devices, and in particular, to silicon carbide (SiC) semiconductor devices and methods of manufacturing the same. Background technique [0002] Technological development of SiC semiconductor devices including field effect transistor cells is aimed at reducing the area-specific on-state resistance R DS（on） without affecting the source-drain blocking voltage capability V DS produce adverse effects. Although one device characteristic can be improved by changing a certain device parameter, this may cause another device characteristic to degrade. As an example, the area-specific on-resistance R can be improved by, for example, increasing the drift region doping concentration DS（on） , however, this may result in a source-drain blocking voltage capability of V DS of degradation. Therefore, given the target device specification, device parameters are designed during technology development based on some trade...

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Problems solved by technology

Although one device characteristic can be improved by changing a certain device parameter, this may lead to degradation of another device characteristic

As an example, the area-specific on-resistance R can be improved by, for example, increasing the drift region doping concentration DS（on） , however, this may result in a blocking voltage capability V between source and drain DS the degradation of

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