Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Analysis method of electron backscatter diffraction

A technology of electron backscattering and analysis method, which is applied in the field of metal material detection, can solve problems such as complex determination methods and affecting the accuracy of EBSD analysis, and achieve the effect of improving accuracy

Pending Publication Date: 2020-09-18
SHOUGANG CORPORATION
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides an analysis method of electron backscatter diffraction to solve or partially solve the technical problem that the existing EBSD spatial resolution determination method is too complicated to affect the accuracy of EBSD analysis

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Analysis method of electron backscatter diffraction
  • Analysis method of electron backscatter diffraction
  • Analysis method of electron backscatter diffraction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] In order to enable those skilled in the technical field to which the application belongs to understand the application more clearly, the technical solutions of the application will be described in detail below through specific embodiments in conjunction with the accompanying drawings.

[0036] Based on the importance of accurately grasping the spatial resolution in EBSD analysis, in an optional embodiment, a method for determining the spatial resolution based on the quality of the Kikuchi pattern based on EBSD analysis and then performing EBSD analysis is proposed. The overall idea as follows:

[0037] An analysis method of electron backscatter diffraction, as attached figure 1 shown, including:

[0038] S1: Prepare calibration samples according to the preset process;

[0039] S2: According to the preset working parameters, conduct EBSD analysis on the calibration sample under the scanning electron microscope to determine the target grain boundary of the calibration s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Widthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an analysis method of electron backscatter diffraction. The method comprises the following steps of preparing a calibration sample according to a preset process,according to preset working parameters, performing electron backscatter diffraction (EBSD) analysis on the calibration sample under a scanning electron microscope, and determining a target grain boundary of the calibration sample, carrying out line scanning analysis on the target grain boundary by adopting afirst scanning step length to obtain pattern quality BC values of the chrysanthemum pool patterns of all sampling points on an online scanning path,carrying out single-peak fitting on all the BC values to obtain a single-peak fitting curve of the BC values,determining the full width at half maximum of thesingle-peak fitting curve, and determining the full width at half maximum as the spatial resolution of EBSD analysis of the scanning electron microscope under preset working parameters,and accordingto the spatial resolution, determining a target analysis parameter when the to-be-analyzed sample is subjected to EBSD analysis. According to the method, the spatial resolution of the EBSD under the current working parameters can be analyzed more conveniently and quickly, and the EBSD analysis accuracy of the to-be-analyzed sample is improved on the basis.

Description

technical field [0001] The present application relates to the technical field of metal material detection, in particular to an analysis method of electron backscattered diffraction. Background technique [0002] Adding a backscattered electron diffraction analysis device (EBSD) to the scanning electron microscope can be used to analyze the crystallographic information of materials, and has been widely used in the characterization of the microstructure and texture of metal materials. The resolution of EBSD includes spatial resolution and angular resolution. The spatial resolution refers to the size of the smallest grain that can be resolved by EBSD, which determines the applicable scanning step in EBSD analysis. Generally speaking, the spatial resolution of EBSD mainly depends on the beam spot size of the incident electron beam. If the size of the electron beam spot is larger, the spatial resolution is smaller; in addition, the spatial resolution of EBSD is also related to th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N23/20058G01N23/203G01N23/2055G01N23/2251G01N33/204
CPCG01N23/20058G01N23/203G01N23/2055G01N23/2251G01N33/204G01N2223/0565G01N2223/102
Inventor 崔桂彬鞠新华杨瑞
Owner SHOUGANG CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com