Integrated circuit full-wave IBIS model extraction method and device based on field-circuit coupling

An integrated circuit, field-circuit coupling technology, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of low integrity, low extraction efficiency, and poor simulation accuracy of IBIS model extraction

Active Publication Date: 2020-10-02
北京智芯仿真科技有限公司
View PDF4 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the inventor found in the process of implementing the present invention that at present, in the extraction of the integrated circuit full-wave IBIS model, the IBIS model extraction parameters of the IC packaging network are broad and fixed, and the extraction integrity of the IBIS model is low, the extraction efficiency is low, and the simulation is accurate poor sex

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated circuit full-wave IBIS model extraction method and device based on field-circuit coupling
  • Integrated circuit full-wave IBIS model extraction method and device based on field-circuit coupling
  • Integrated circuit full-wave IBIS model extraction method and device based on field-circuit coupling

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0083] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be described in detail below through implementation with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the implementation of the present invention example, not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0084] In the description of the present invention, "first", "second", "third", "fourth", "fifth", "sixth" and so on are only used to distinguish each other, not to represent their importance. degree and sequence etc.

[0085] The division of modules in this article is only a division of logical functions, and there may be other division methods in actual implementation, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The embodiment of the invention discloses an integrated circuit full-wave IBIS model extraction method and device based on field-circuit coupling. According to the method, a multi-layer integrated circuit is simplified into a two-dimensional model; polygons of a multilayer integrated circuit layout are aligned and simplified; for the DC electric field model, grid subdivision is carried out on polygons of the simplified multilayer integrated circuit layout; for alternating electromagnetic field model, a parallel flat plate field domain formed by a metal layer-medium is identified and grid subdivision is carried out; a field domain solving equation set is established based on grid subdivision, an overall sparse matrix of the integrated circuit field domain solving equation set is formed, then field-circuit coupling is carried out on an active part and a passive part of an integrated circuit, a multi-port voltage / current curve is calculated, and a multi-port IBIS model is formed. According to the invention, the IBIS model of the IC packaging network can be set to extract related parameters and simulation parameters according to different requirements of users, and the method has the advantages of high IBIS model extraction integrity, high extraction efficiency and high simulation accuracy.

Description

technical field [0001] The invention relates to the technical field of integrated circuit full-wave IBIS model extraction, in particular to a field-circuit coupling-based integrated circuit full-wave IBIS model extraction method and device. Background technique [0002] The IBIS (Input / Output Buffer Information Specification) model is a fast and accurate modeling method for input / output (I / O: Input / Output) BUFFER based on the voltage / current (V / I) curve, which reflects the chip driver It provides a standard file format to record parameters such as drive source output impedance, rise / fall time, and input load. It is very suitable for calculation and simulation of high frequency effects such as oscillation and crosstalk. IBIS can be used to describe the behavioral characteristics of the input, output, and I / O Buffer of an IC device, and to simulate the interaction between the Buffer and the circuit system on the board. [0003] SPICE (Simulation program with integrated circui...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F30/398G06F30/367G06F30/392
CPCG06F30/367G06F30/392G06F30/398
Inventor 唐章宏邹军黄承清汲亚飞王芬
Owner 北京智芯仿真科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products