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IGBT straight-through detection and protection method and device

A technology for direct faults and driving signals, applied in the field of power electronics, can solve the problems of slow IGBT turn-on, false alarm faults, damaged IGBTs, etc., and achieve the effect of improving reliability.

Active Publication Date: 2020-10-09
维谛新能源有限公司
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  • Description
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Problems solved by technology

[0003] However, when high-power IGBTs work under high-voltage and high-current conditions, according to the existing IGBT drive cut-through protection technology, it is very easy to cause false alarms or cut-through due to slow IGBT turn-on or interference, thereby damaging the IGBT.

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  • IGBT straight-through detection and protection method and device
  • IGBT straight-through detection and protection method and device
  • IGBT straight-through detection and protection method and device

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Embodiment Construction

[0085] The specific implementation manners of the IGBT through detection and protection method and device provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0086] It should be noted that the IGBT shoot-through detection and protection methods provided in the embodiments of the present invention may be implemented independently or in combination, which is not limited in the embodiments of the present invention.

[0087] Such as figure 1 As described above, an embodiment of the present invention provides a method for IGBT through detection, including the following steps:

[0088] S101 , when it is determined that the driving signal for driving the IGBT changes from turning off the driving IGBT to turning on the driving IGBT, wait for a first preset time period and then detect the voltage between the drain and the source of the IGBT.

[0089] During specific implementation, when it is determined ...

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Abstract

The embodiment of the invention discloses an IGBT straight-through detection and protection method and device, which are used for avoiding false alarm faults or straight-through caused by slow switching-on or interference of the IGBT. The IGBT straight-through detection method comprises the steps that when it is determined that a driving signal for driving an IGBT is changed from driving IGBT closing to driving IGBT opening, the voltage between a drain electrode and a source electrode of the IGBT is detected after waiting for a first preset duration; and when it is determined that the voltagebetween the drain electrode of the IGBT and the source electrode of the IGBT is greater than a preset fault voltage threshold, it is determined that the IGBT has a direct connection fault.

Description

technical field [0001] The present invention relates to the technical field of power electronics, in particular to an IGBT through detection and protection method and device. Background technique [0002] The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is a composite fully-controlled voltage-driven transistor composed of a metal-oxide-semiconductor (Metal Oxide Semiconductor, MOS) tube and a bipolar junction transistor (Bipolar Junction Transistor, BJT). Power semiconductor devices have the advantages of high input impedance of MOS tubes and low conduction voltage drop of power transistors (Giant Transistor, GTR). With the above advantages, IGBTs have been widely used in the fields of converters, frequency converters, and switching power supplies. It is widely used, especially plays an important role in high-power circuits. [0003] However, when high-power IGBTs work under high-voltage and high-current conditions, according to the existing I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/261
Inventor 李佳谭超
Owner 维谛新能源有限公司
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