Three-dimensional micro-assembled low-frequency dual-band driving power amplifier

A power amplifier and micro-assembly technology, which is applied to power amplifiers, amplifiers, and components of amplifying devices, etc., can solve problems such as the inability to meet the dual-frequency and lightweight requirements of active phased array radar, and achieve high reliability and volume. small effect

Pending Publication Date: 2020-10-09
CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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  • Abstract
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  • Application Information

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Problems solved by technology

[0003] At present, micro-assembly technology is widely used in S-band and above power amplifiers. Most of the low-frequency bands below L-band are assembled with discrete devices. The driving power amplifier ge

Method used

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  • Three-dimensional micro-assembled low-frequency dual-band driving power amplifier
  • Three-dimensional micro-assembled low-frequency dual-band driving power amplifier
  • Three-dimensional micro-assembled low-frequency dual-band driving power amplifier

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Embodiment Construction

[0019] combine Figure 1-Figure 3 , in the description of this embodiment, it should be understood that orientation words such as "front, back, up, down, left, right", "horizontal, vertical, vertical, horizontal" and "top, bottom" etc. The orientation or positional relationship is generally based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing this embodiment and simplifying the description. In the absence of a contrary statement, these orientation words do not indicate or imply the indicated Devices or components must have a specific orientation or be constructed and operated in a specific orientation, and thus should not be construed as limiting the protection scope of the present invention; the orientation words "inside and outside" refer to inside and outside relative to the outline of each component itself.

[0020] In the description of this embodiment, it should be understood that the use of words such a...

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Abstract

The invention relates to a three-dimensional micro-assembly low-frequency dual-band driving power amplifier. The power amplifier comprises a shell, an upper cover plate and a lower cover plate; the upper cover plate and the lower cover plate are respectively arranged at the upper and lower ends of the shell; a low-frequency connector, two radio frequency connectors and two radio frequency glass beads are arranged on the outer surface of the shell, wherein a push power amplifier, an LTCC plate and two power amplifier slides working in different wave bands are arranged in the shell, a control and power supply bare chip is mounted on the LTCC plate through a micro-assembly process, the LTCC plate is connected with the push power amplifier through a low-frequency glass bead, and components arearranged on the push power amplifier; the low-frequency connector receives an external power supply signal and a control signal and transmits the signals to the control and power supply bare chip, and the control and power supply bare chip selects a transmission path of a radio frequency signal according to the control signal. By using the three-dimensional micro-assembly technology, the active phased array radar dual-band antenna has the characteristics of small size, high reliability and the like, can work in low-frequency dual bands, and meets the dual-band working requirements of the active phased array radar.

Description

technical field [0001] The invention relates to the field of microwave devices, in particular to a three-dimensional micro-assembled low-frequency dual-band driving power amplifier. Background technique [0002] In the design of active phased array radar T / R components, the driving power amplifier plays the functions of excitation signal amplification, final power amplifier driving and transceiver link switching. With the development of active phased array radar detection technology, the single-frequency driving power amplifier can no longer meet the task requirements. At the same time, in order to solve the problem of its light weight, micro-assembly technology gradually replaces the discrete device assembly technology to realize the dual-frequency, High integration and lightweight requirements. [0003] At present, micro-assembly technology is widely used in S-band and above power amplifiers. Most of the low-frequency bands below L-band are assembled with discrete devices...

Claims

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Application Information

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IPC IPC(8): H03F1/00H03F3/24H05K5/00H05K5/02H05K7/00
CPCH03F1/00H03F3/24H05K5/0004H05K5/0247H05K7/005
Inventor 夏达梁磊李姗姗
Owner CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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