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High-power SIC MOSFET module bonding wire health state detection method and device

A technology of health status and detection method, applied in the directions of measuring devices, measuring electricity, measuring electrical variables, etc., can solve the problem of not fully applicable to high-power SICMOSFET modules, etc., achieve predictable maintenance, and realize online health status assessment and measurement. high precision effect

Active Publication Date: 2020-10-16
江苏国传电气有限公司
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Problems solved by technology

[0013] The above methods are mostly improved from the bonding wire health status monitoring method of high-power IGBT, and are not completely suitable for high-power SIC MOSFET modules.

Method used

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  • High-power SIC MOSFET module bonding wire health state detection method and device
  • High-power SIC MOSFET module bonding wire health state detection method and device
  • High-power SIC MOSFET module bonding wire health state detection method and device

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Embodiment Construction

[0041] In order to describe the present invention more specifically, the method will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0042] figure 1 It is a flowchart of a method for detecting the health state of a bonding wire of a high-power SIC MOSFET module according to an embodiment of the present invention, and the method steps include:

[0043] Building a SIC MOSFET module V peak,sS健康 Reference value reference database; at the turn-off transient, at the same time obtain the SICMOSFET module turn-off transient drain current I D and the induced electromotive force V between the auxiliary source s and the power source S of the SIC MOSFET module sS , and measure the induced electromotive force V sS The peak value of V peak,sS ; Set the health reference value V peak,sS健康 with peak V peak,sS Comparing and calculating the deviation value; according to the deviation value, it is judged whether there is a shedding faul...

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Abstract

The invention discloses a high-power SIC MOSFET module bonding wire health state detection method and device. The method comprises the steps that an SIC MOSFET module Vpeak, sS health reference valuebenchmark database is established; in the turn-off transient state, the turn-off transient drain current ID of the SIC MOSFET module and the induced electromotive force VsS between the auxiliary source s and the power source S of the SIC MOSFET module are obtained at the same time, and the peak value Vpeak, sS of the induced electromotive force VsS is measured; the health reference value Vpeak, sShealth is compared with the peak value Vpeak, sS, and a deviation value is calculated; and whether the bonding wire of the SIC MOSFET module has a falling fault or not is judged according to the deviation value. According to the method, online health state evaluation of the SIC MOSFET module is realized, the safety problem caused by aging of the bonding wire can be effectively avoided, and predictable maintenance of equipment is realized.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a method and a device suitable for detecting the health state of bonding wires of high-power SIC MOSFET modules. Background technique [0002] As a new generation of power semiconductor devices, SIC MOSFETs are gradually being used in various fields such as traction, electric vehicles, and renewable energy due to their advantages such as low driving power, high operating frequency, high input impedance, and low conduction voltage. As the core component of the power converter, the SIC MOSFET module also bears the impact of power cycle while performing power conversion, which leads to aging and failure. [0003] Industry statistics show that failures caused by power semiconductor devices account for 20% of converter system failures. As the most vulnerable link in the SIC MOSFET module, the bonding wire is particularly prone to failure. In the existing resear...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2621G01R31/2642
Inventor 谭国俊耿程飞朱春宇张经伟
Owner 江苏国传电气有限公司
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