Negative voltage turn-off driving circuit based on wide bandgap power device
A technology of power devices and drive circuits, which is applied in the field of negative voltage shutdown drive circuits, can solve the problems of increased loss of drive circuits, no negative voltage shutdown capability of the drive scheme, and unsuitability for bootstrap drive circuits.
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[0062] The following is attached Figure 5-8 The present invention is described in further detail.
[0063]In power electronics applications, the third-generation wide bandgap power devices represented by SiC MOSFET and GaN HEMT, due to the high-speed switching action of power devices and the parasitic parameters of power devices (such as the junction capacitance C of SiC MOSFET GD and C GS , common source parasitic inductance L CS ) will cause positive voltage spikes or negative voltage spikes at the gate and source of power devices, such as Figure 5 shown.
[0064] Due to the low threshold voltage of wide bandgap power devices (such as the GaN threshold voltage of 1.2V), the self-oscillation and bridge crosstalk of power devices cause forward voltage spikes at the gate and source of power devices, which will lead to false conduction of switching devices. False turn-on of power devices will lead to increased switching loss and damage to power devices. Therefore, it is ne...
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