Connecting material for connecting silicon carbide ceramics and application method thereof

A technology of silicon carbide ceramics and connecting materials, which is applied in the field of silicon carbide ceramic materials, can solve the problems of affecting the mechanical strength performance of silicon carbide ceramic materials, the difficulty of industrial production, and the high requirements for external heat sources, so as to achieve the benefit of metallurgical reactions and the difficulty of industrial production Small, the effect of increasing the surface energy of the interface

Inactive Publication Date: 2020-11-06
ANHUI UNIVERSITY OF TECHNOLOGY AND SCIENCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The connection temperature required by the connection materials is generally high, at least higher than 1000 ° C, and the existing connection materials completely rely on external heat sources to provide heat, which requires high heat provided by external heat sources; and the connection layer formed by the existing connection materials Thicker, when the external heat source supplies heat to increase the connection temperature, the heat provided by the required external heat source increases, so the requirements for the external heat source are high, the cost is increased, and industrial production is difficult
In addition, due to the thick connection layer formed by the existing connection materials, the concentration of silicon atoms and carbon atoms diffused from silicon carbide and its composite materials in the connection layer is low, the element distribution range is large, the reaction is insufficient, and it is easy to Produce other brittle phases, which affect the mechanical strength properties of the silicon carbide ceramic material after bonding

Method used

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  • Connecting material for connecting silicon carbide ceramics and application method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Such as figure 1 The silicon carbide ceramic material to be connected is connected by a connecting layer as shown, and the silicon carbide ceramic material to be connected is two cylindrical pure silicon carbide ceramic materials with a diameter and a height of 20 mm; the connecting layer is a CoFeCrNiCu high-entropy alloy sheet, and The thickness of the CoFeCrNiCu high-entropy alloy sheet is 100 μm, and the material used for the connection layer is a CoFeCrNiCu high-entropy alloy. The preparation method of the material is as follows: a high-entropy alloy with a single FCC structure can be obtained by preparing a CoFeCrNiCu quinary alloy according to an equiatomic ratio to form CoFeCrNiCu High entropy alloys.

[0030] An external heat source heating connection method is used to connect the silicon carbide materials to be connected together through the connection layer, and the external heat source heating connection method is electric field assisted thermocompression co...

Embodiment 2

[0037] The difference between this embodiment and embodiment 1 is:

[0038]The silicon carbide ceramic material to be connected is two composite materials based on pure silicon carbide ceramic material, specifically carbon fiber reinforced silicon carbide composite material; the connecting layer is CoFeCrNiCuTi 0.5 High-entropy alloy flakes, and CoFeCrNiCuTi 0.5 The thickness of the high-entropy alloy sheet is 400 μm, and the material used for the connection layer is CoFeCrNiCuTi 0.5 High-entropy alloy, the preparation method of this material is: first prepare the CoFeCrNiCu quinary alloy according to the equiatomic ratio to obtain a high-entropy alloy with a single FCC structure, and then add Ti element to form CoFeCrNiCuTi 0.5 High entropy alloys.

[0039] In step (5), the temperature is raised to a furnace temperature of 1075° C. (that is, the connection temperature is 1075° C.).

[0040] Others are with embodiment 1.

Embodiment 3

[0042] The difference between this embodiment and embodiment 1 is:

[0043] The silicon carbide ceramic material to be connected is two composite materials with pure silicon carbide ceramic material as the matrix, specifically silicon carbide fiber reinforced silicon carbide composite material; the connecting layer is a CoFeCrNiCuTi high-entropy alloy sheet, and the thickness of the CoFeCrNiCuTi high-entropy alloy sheet is 300 μm , the material used in the connection layer is a CoFeCrNiCuTi high-entropy alloy. The preparation method of this material is: first prepare the CoFeCrNiCu quinary alloy according to the equiatomic ratio to obtain a high-entropy alloy with a single FCC structure, and then add Ti element to form a CoFeCrNiCuTi high-entropy alloy .

[0044] In step (5), the temperature is raised to a furnace temperature of 1100° C. (that is, the connection temperature is 1100° C.).

[0045] Others are with embodiment 1.

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Abstract

The invention discloses a method for electric field assisted connection of silicon carbide ceramic and a connecting material adopted by the method, and belongs to the field of silicon carbide ceramicmaterial. The method comprises the following steps: clamping a connecting layer between to-be-connected silicon carbide ceramic materials, and connecting the to-be-connected SiC materials together byheating a connecting interface to a connecting temperature of 1000 DEG C or above under the assistance of an external electric field; wherein the connecting layer is a high-entropy alloy sheet with the thickness smaller than 1 mm. And the connecting layer is made of a CoFeCrNiCuTix high-entropy alloy. The requirement for an external heat source is low, the connecting speed is high, the mechanicalstrength performance of the connected silicon carbide ceramic material is good, cost saving is facilitated, the industrial production difficulty is lowered, and rapid and high-quality connection is achieved.

Description

technical field [0001] The invention relates to the field of silicon carbide ceramic materials, in particular to a connection material for connecting silicon carbide ceramics and an application method thereof. Background technique [0002] With the rapid development of science and technology and industrial needs, there is an increasing demand for new materials that can serve in extremely harsh high-temperature environments. Silicon carbide (SiC) ceramic materials have good wear resistance, stability, thermal conductivity, oxidation resistance and excellent high-temperature mechanical properties, and can be widely used in optical systems, space technology, thermal protection, vehicles, energy technology and other fields . However, the high brittleness and low ductility of silicon carbide ceramics and their composite materials make it difficult to make complex parts, and they are often connected with other parts to form a composite structure to meet the use requirements. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/00C22C30/02
CPCC04B37/003C22C30/02C04B2237/122C04B2237/123C04B2237/124C04B2237/365
Inventor 王刚刘一贺王秒杨云龙
Owner ANHUI UNIVERSITY OF TECHNOLOGY AND SCIENCE
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