High-electron-mobility transistor with annular gate structure
A high electron mobility, annular structure technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of physical structure instability, easy to reverse gate, etc., to achieve high output power, increase gate perimeter, increase EFFECT OF EQUIVALENT GRID WIDTH
Active Publication Date: 2020-11-10
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Problems solved by technology
[0003] To sum up, for HEMT devices with small-sized gates, when the gate size is reduced, the linear "T" gate or "Y" gate structure is unstable in physical structure, and it is easy to reverse the gate.
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[0025] The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0026] Take the AlGaN / GaN HEMT structure material as an example, and take the first basic structure as an example. like figure 1 As shown, the source electrode 101 and the drain electrode 102 are first prepared on the AlGaN / GaN HEMT structure material, and the source and drain metals can be TiAuNiAu, prepared by electron beam evaporation and stripping, and form ohmic contacts through superalloys. The source 101 is circular, and the drain 102 is a closed ring structure. The GaN HEMT epitaxial structure itself includes substrate SiC, buffer layer, channel layer GaN and barrier layer AlGaN, etc. The structure is mature and will not be described here. After the source and drain metals are prepared, the SiN dielectric is grown for passivation protection to prevent the source and drain metals from being corroded or oxidized.
[0027] like fi...
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The invention discloses a high-electron-mobility transistor with an annular gate structure, and the transistor comprises a source electrode, a drain electrode and a gate electrode; the gate electrodeis of an annular structure, and the high-electron-mobility transistor comprises two basic structures: the first basic structure is that the source electrode is of a circular structure, the drain electrode is of an annular structure, the source electrode is positioned on the inner ring of the gate electrode, and the drain electrode is positioned on the outer ring of the gate electrode; gaps exist between the source electrode and the grid electrode and between the drain electrode and the grid electrode; the second basic structure is that the drain electrode is of a circular structure, the sourceelectrode is of an annular structure, the drain electrode is located on the inner circle of the grid electrode, the source electrode is located on the outer circle of the drain electrode, and gaps exist between the source electrode and the grid electrode. The grid electrode is converted into the annular structure from the linear structure, so the structure is stable, and the stability and low parasitic capacitance of the device are guaranteed.
Description
technical field [0001] The invention belongs to the field of microwave and millimeter wave devices, and in particular relates to a high electron mobility transistor. Background technique [0002] The three generations of semiconductors have broad application prospects in the high frequency field of microwave and millimeter wave chips. Millimeter-wave and terahertz High Electron Mobility Transistor (HEMT) devices are the core components of millimeter-wave communication, millimeter-wave radar, terahertz imaging, and terahertz detection systems. One of the main process bottlenecks that restricts the development of high-frequency devices is the parasitic and structural stability problems associated with small-scale gates. At present, the gate process of millimeter-wave HEMT devices is generally based on the "T" gate or "Y" gate based on electron beam direct writing. The structure is generally the source on one side and the drain on the other. The gate is in the middle, and the ...
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Login to View More IPC IPC(8): H01L29/423H01L29/417H01L29/778H01L21/335
CPCH01L29/42356H01L29/42376H01L29/4238H01L29/41741H01L29/41775H01L29/7787H01L29/66462
Inventor 吴少兵张亦斌陈韬刘世郑陈堂胜
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD