Unlock instant, AI-driven research and patent intelligence for your innovation.

Three-dimensional memory and manufacturing method thereof

Pending Publication Date: 2020-11-17
YANGTZE MEMORY TECH CO LTD
View PDF12 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This requires additional etch and mask, which increases the cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings that need to be used in the description of the embodiments. Obviously, the accompanying drawings in the following description are only some examples or embodiments of the present application, and those skilled in the art can also apply the present application to other similar scenarios. Unless otherwise apparent from context or otherwise indicated, like reference numerals in the figures represent like structures or operations.

[0026] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a three-dimensional memory and a manufacturing method thereof. The manufacturing method of the three-dimensional memory comprises the following steps: providing a semiconductorstructure, wherein the semiconductor structure comprises a substrate, an insulating layer, a conductor layer and a stacking layer, the insulating layer, the conductor layer and the stacking layer aresequentially arranged on the substrate, and the conductor layer is provided with a peripheral area which is not covered by the stacking layer; forming a first through hole which vertically penetratesthrough the conductor layer and reaches the insulating layer; forming a gap wall in the first through hole; and forming a first conductive part in the first through hole, wherein the gap wall is arranged between the conductor layer and the first conductive part. According to the method provided by the invention, the isolation of the conductor layer and the conductive part can be realized under thecondition of not needing an additional mask.

Description

technical field [0001] The invention mainly relates to the field of semiconductors, in particular to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] With the continuous improvement of the market's requirements for storage density, the reduction of key dimensions of two-dimensional memory has reached the limit of mass production technology. In order to further increase storage capacity and reduce costs, a three-dimensional structure memory is proposed. [0003] In order to increase the storage density, it is generally realized by increasing the number of stacked layers in the three-dimensional memory. In the current mainstream 3D NAND flash memory three-dimensional memory device, with the continuous increase of the number of stacked layers of the memory array structure, silicon-oxide-nitride-oxide (Si,Oxide, Nitride, Oxide, SONO) etching process difficulty increases accordingly. [0004] Some improved solutions use alternative st...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11573H01L27/11582H10B43/35H10B43/27H10B43/40
CPCH10B43/40H10B43/35H10B43/27
Inventor 赵婷婷刘磊周文犀
Owner YANGTZE MEMORY TECH CO LTD