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Method for manufacturing monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material

An epitaxial growth, single crystal layer technology, applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problem of not being able to obtain single crystal substrates

Pending Publication Date: 2020-11-17
SOITEC SA
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Certain materials are not currently available as single crystal substrates in large diameter wafer form

Method used

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  • Method for manufacturing monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material
  • Method for manufacturing monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material
  • Method for manufacturing monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material

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Embodiment Construction

[0026] figure 1 Showing a carrier substrate 100 of silicon material, SrTiO 3 A single crystal seed layer 200 of material is transferred thereon. Other materials for the single crystal seed layer 200 are contemplated, such as YSZ, CeO 2 , MgO or Al 2 o 3 , these materials have lattice parameters close to GaAs materials. The carrier substrate 100 of silicon material can also be replaced by a carrier substrate 100 of sapphire, Ni or Cu material. The advantage of using silicon is that it not only opens up the field of application of GaAs material films for large devices of the 300mm type, but also makes it compatible with the microelectronics industry, for which there is no need for foreign materials other than silicon in the production line, Especially GaAs is very demanding in terms of acceptance. SrTiO 3 The step of bonding 1' of the monocrystalline seed layer 200 of material to the carrier substrate 100 of silicon material is preferably performed by a molecular adhesion...

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Abstract

The invention relates to a method for manufacturing a monocrystalline layer of GaAs material comprising the transfer of a monocrystalline seed of SrTiO3 material onto a support substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.

Description

technical field [0001] The invention relates to a method for producing a single crystal layer of GaAs material and a substrate for the epitaxial growth of such a single crystal layer of GaAs material. Background technique [0002] Certain materials are not currently available as single crystal substrates in the form of large diameter wafers. Furthermore, certain materials are available in large diameters but do not have certain properties or specifications in terms of quality, especially with regard to defect density or desired electrical or optical properties. Contents of the invention [0003] The object of the present invention is to overcome these limitations of the prior art by providing a method for manufacturing a single crystal layer of GaAs material and a substrate for the epitaxial growth of such a single crystal layer of GaAs material. In this way, the size problem of currently available single crystal substrates of GaAs material can be solved. [0004] The pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/02C30B25/18C30B29/42H01L21/762
CPCH01L21/76254C30B23/025C30B25/183C30B29/42C30B29/32H01L21/02381H01L21/02488H01L21/02546H01L21/02598H01L21/02645
Inventor 布鲁诺·吉瑟兰
Owner SOITEC SA
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