Intelligent data storage system based on piezoelectric sensor-memristor

A data storage system, piezoelectric sensor technology, applied in the field of microelectronics and nanomaterials

Active Publication Date: 2020-11-20
TIANJIN UNIVERSITY OF TECHNOLOGY
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current mainstream non-volatile storage technologies on the market are gradually encountering development bottlenecks in terms of size, power consumption, and reliability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Intelligent data storage system based on piezoelectric sensor-memristor
  • Intelligent data storage system based on piezoelectric sensor-memristor
  • Intelligent data storage system based on piezoelectric sensor-memristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The technical solutions of the present invention will be further described below in conjunction with specific embodiments, and an intelligent data storage system based on piezoelectric sensors / memristors will be described in detail below in conjunction with the accompanying drawings.

[0039] as attached figure 1 As shown in the basic circuit diagram of the piezoelectric sensor, an additional external circuit is designed through components such as resistors, inductors and transistors. In the process of testing the pressure generator, it was found that the electrical signal converted from the mechanical signal cannot produce any effect under the condition of direct external load. The study found that due to the large leakage current of the pressure generator, it appears that there is only voltage to the outside. If you need to access the load, you must have enough current, so design an external circuit to reduce its leakage current.

[0040] as attached figure 1 The s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an intelligent data storage system based on a piezoelectric sensor-a memristor, which integrates the piezoelectric sensor and the memristor to convert a pressure signal into anelectrical signal so as to drive the memristor to record and store data. A protection circuit is designed at the output port of the pressure power generation sheet, so that the memristor is not broken down by an external mechanical signal. When the intelligent data storage system works, no external voltage needs to be added no matter recording, conversion or erasing. The piezoelectric sensor andthe memristor are creatively integrated into an intelligent data storage system, the piezoelectric sensor and the memristor are combined, preliminary application is formed, and through multiple tests,the system is high in stability, capable of adapting to various environments and wide in application prospect.

Description

technical field [0001] The invention relates to the field of application of nanometer materials and the field of microelectronic technology, in particular to an intelligent data storage system based on a piezoelectric sensor / memristor. Background technique [0002] As a technological science that has developed rapidly in recent years, artificial intelligence is changing human life at an unprecedented speed. Compared with humans, artificial intelligence devices have better computing speed, storage space, reliability and durability, and artificial intelligence has gradually entered all aspects of human life. [0003] Today's society is a rapidly developing society, and people's demand for data storage is growing rapidly. Processing a large amount of information puts forward higher requirements on the performance of existing storage devices. The current mainstream non-volatile storage technologies on the market are gradually encountering development bottlenecks in terms of si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/56G11C16/06H01L45/00
CPCG11C11/56G11C16/06H10N70/8833
Inventor 杨正春李沛君弭伟吴健文朱博郭睿轩伏特朱云昊李珍赵金石张楷亮
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products