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Image sensor pixel unit and forming method and working method thereof

An image sensor, pixel unit technology, applied in image communication, electrical components, electrical solid devices, etc., can solve the problem of CMOS image sensor performance needs to be improved, and achieve the effect of increasing radiation resistance, reducing dark current, and improving imaging quality

Pending Publication Date: 2020-11-27
BRIGATES MICROELECTRONICS KUNSHAN
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Problems solved by technology

Therefore, the performance of the existing CMOS image sensor needs to be improved

Method used

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  • Image sensor pixel unit and forming method and working method thereof
  • Image sensor pixel unit and forming method and working method thereof
  • Image sensor pixel unit and forming method and working method thereof

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Experimental program
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Embodiment Construction

[0060] As mentioned in the background, it is necessary to improve the influence of noise on the CMOS image sensor, so as to improve the performance of the CMOS image sensor. Now analyze and illustrate in conjunction with specific embodiment.

[0061] figure 1 It is a schematic cross-sectional structure diagram of an image sensor pixel unit in an embodiment.

[0062] Please refer to figure 1 , including: a substrate 100, the substrate 100 includes an opposite first surface and a second surface, the substrate 100 includes a pixel region I and a logic region II, and the pixel region I and the logic region II are adjacent; The first photoelectric doped region 101 in the pixel region 1, the first photoelectric doped region 101 has first ions; the second photoelectric doped region 102 located in the first photoelectric doped region 101, the second The doping ion conductivity type in the photoelectric doped region 102 is the same as the first ion conductivity type, and the dopant ...

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Abstract

The invention discloses an image sensor pixel unit, a forming method of the image sensor pixel unit and a working method of the mage sensor pixel unit, wherein the pixel unit comprises a substrate comprising a pixel area and a logic area, wherein the pixel area is adjacent to the logic area; a first photoelectric doped region is located in the pixel region, wherein the surface of the substrate isexposed out of the surface of the first photoelectric doped region, and first ions are arranged in the first photoelectric doped region; a shield gate structure on the pixel region. The radiation resistance of an image sensor is improved.

Description

technical field [0001] The present invention relates to the field of image sensor manufacturing, in particular to an image sensor pixel unit, a method for forming the image sensor pixel unit and a working method for the image sensor pixel unit. Background technique [0002] An image sensor is a semiconductor device that converts light signals into electrical signals. [0003] The image sensor is divided into a CMOS (Complementary Metal Oxide Semiconductor, CMOS for short) image sensor and a CCD (charge coupled device, charge coupled device, CCD for short) image sensor. CMOS image sensor has the advantages of simple process, easy integration with other devices, small size, light weight, low power consumption and low cost. Therefore, with the development of image sensing technology, CMOS image sensors are increasingly used in various electronic products instead of CCD image sensors. At present, CMOS image sensors have been widely used in still digital cameras, digital video ...

Claims

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Application Information

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IPC IPC(8): H01L27/146H04N5/361H04N5/374
CPCH01L27/14643H01L27/14614H01L27/14683H04N25/63H04N25/76
Inventor 罗文哲王林胡万景黄金德
Owner BRIGATES MICROELECTRONICS KUNSHAN
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