Preparation method of Si/SiGe through hole active adapter plate for three-dimensional packaging
A three-dimensional packaging and switching board technology, applied in the manufacturing of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of waste of silicon material, low carrier mobility, affecting the working speed of devices, etc., and achieve high working speed. , The effect of reducing production cost and simple process
Active Publication Date: 2020-12-04
FUDAN UNIV +1
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Problems solved by technology
However, for the thinning of silicon wafers, mechanical grinding is usually used, in which a considerable thickness of silicon material will be removed and cannot be recycled, resulting in a large amount of waste of silicon material
In addition, due to the low carrier mobility in silicon, this will affect the operating speed of the device
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[0021] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. It should be understood that the specific The examples are only used to explain the present invention, not to limit the present invention. The described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0022] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical" and "horizontal" are based on the orientation or positional relationship shown in the ...
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Abstract
The invention discloses a preparation method of a Si / SiGe through hole active adapter plate for three-dimensional packaging. According to the invention, a SiGe / Si / SiGe laminated layer is formed on a silicon substrate in an epitaxial mode, then the first-layer SiGe material is selectively removed so as to separate the Si material / second-layer of SiGe material from the bottom silicon substrate, andthe Si material / second-layer SiGe material serves as a base for preparing an active adapter plate, so that the process is simple, the silicon substrate does not need to be damaged, and the productioncost is effectively reduced; and the carrier mobility in the SiGe is higher than that in the Si, so that a device with higher working speed can be obtained by preparing an active device on the surfaceof the SiGe.
Description
technical field [0001] The invention relates to the field of integrated circuit packaging, in particular to a method for preparing a Si / SiGe through-hole active adapter board for three-dimensional packaging. Background technique [0002] With the rapid development of integrated circuit technology, microelectronic packaging technology has gradually become the main factor restricting the development of semiconductor technology. In order to realize the high density of electronic packaging, obtain better performance and lower overall cost, technicians have developed a series of advanced packaging technologies. Among them, the three-dimensional system-in-package technology has good electrical performance and high reliability, and can achieve high packaging density at the same time, and is widely used in various high-speed circuits and miniaturized systems. Through Silicon Via (TSV) interposer technology is a new technology for interconnection of stacked chips in three-dimensiona...
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IPC IPC(8): H01L21/768H01L21/3065
CPCH01L21/76898H01L21/3065
Inventor 朱宝陈琳孙清清张卫
Owner FUDAN UNIV