Supercharge Your Innovation With Domain-Expert AI Agents!

A low power consumption anti-jamming over-temperature protection circuit

An over-temperature protection circuit and resistance technology, applied in the direction of adjusting electrical variables, instruments, control/regulating systems, etc., can solve the problems of overheating and burnout of semiconductor components, achieve large margin, prevent chip temperature from being too high, anti-interference powerful effect

Active Publication Date: 2021-06-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of these solutions need to output the chip shutdown signal when the temperature exceeds a certain threshold, which has a certain hysteresis. Obviously, such a hysteresis will cause some high-temperature semiconductor components to overheat and burn out.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A low power consumption anti-jamming over-temperature protection circuit
  • A low power consumption anti-jamming over-temperature protection circuit
  • A low power consumption anti-jamming over-temperature protection circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0029] The present invention utilizes the reference voltage VREF_CTAT having CTAT (inversely proportional to absolute temperature) characteristics to compare with reference voltages Vbias-ref_4 and Vbias-ref_5 having PTAT (proportional to absolute temperature) characteristics to obtain over-temperature flag signal OT_H, wherein the absolute The temperature-inversely proportional reference voltage VREF_CTAT can be determined by as figure 1 shown in the reference voltage generation block generated.

[0030] Such as figure 1 As shown, the reference voltage generating module in this embodiment includes a first resistor R 1 , the second resistance R 2 , the third resistor R 3 , the fourth resistor R 4 , the first transistor Q1, the second transistor Q2, the third transistor Q3, the fourth transistor Q4, the first NMOS transistor NM1, the secon...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a low-power anti-interference over-temperature protection circuit, which belongs to the technical field of over-temperature protection. The invention uses two reference voltages with PTAT characteristics to set the hysteresis window for temperature detection, combined with the reference voltage with CTAT characteristics to realize over-temperature detection, and solves the hysteresis caused by only setting one temperature detection value in the traditional over-temperature protection circuit. The problem of burning out can prevent the life of the device from being too high when the chip temperature is too high; and compared with the reference voltage with zero temperature coefficient used by the traditional over-temperature protection circuit, the present invention can achieve a larger hysteresis window margin and stronger anti-interference ability ; The present invention adjusts any one or more of the voltage change slope of the reference voltage and the voltage change slope of the two reference voltages according to the required hysteresis amount of the temperature detection hysteresis window, and adopts a cascode structure to achieve high precision and low power consumption.

Description

technical field [0001] The invention belongs to the technical field of over-temperature protection, and relates to an over-temperature protection circuit with low power consumption and anti-interference. Background technique [0002] With the improvement of chip integration, the power density is also increasing. The power consumption generated during the working process of the chip will increase the temperature of the chip. Excessively high temperature will cause the performance of the device to decline and the life of the device will be damaged. Therefore, it is necessary to add an over-temperature protection circuit for it. Ordinary over-temperature protection circuits use temperature-sensitive components to detect changes in the internal temperature of the chip. When the temperature is higher than a certain value, the circuit will generate a control signal to shut down the chip until the temperature returns to normal, and the chip will start again. normal work. [0003]...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/569
CPCG05F1/569
Inventor 周泽坤王佳文肖志平石跃王卓张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com