Polishing process for back plate in target material assembly

A process and target material technology, which is applied in the polishing process of the back plate in the target component, can solve the problems affecting the effect of the back plate and the impact of target sputtering, so as to prolong the service life, improve the polishing efficiency, and eliminate the surface The effect of stress

Inactive Publication Date: 2020-12-15
合肥江丰电子材料有限公司
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the presence of foreign matter, copper rust and residual indium on the backplane will significantly affect the use of the backplane, and it will also affect the sputtering of the target.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] This embodiment provides a polishing process for the back plate in the target assembly, the polishing process includes sequentially performing first mechanical polishing and second mechanical polishing on the target back plate;

[0029] The abrasive belt used in the first mechanical polishing is a non-woven endless belt of 600#, the rotating speed of the abrasive belt is 11m / min, the feed rate is 9m / min, and the rotating speed of the polishing wheel is 5m / min;

[0030] The abrasive belt used in the second mechanical polishing is a 240# non-woven endless belt, the rotational speed of the abrasive belt is 6m / min, the feed speed is 5m / min, and the rotational speed of the polishing wheel is 9m / min.

[0031] The dirt and surface stress on the surface of the backplane are removed, and the service life is prolonged. It is qualified after polishing for 30 minutes.

Embodiment 2

[0033] This embodiment provides a polishing process for the back plate in the target assembly, the polishing process includes sequentially performing first mechanical polishing and second mechanical polishing on the target back plate;

[0034] The abrasive belt used in the first mechanical polishing is a non-woven endless belt of 600#, the rotating speed of the abrasive belt is 13m / min, the feed rate is 6m / min, and the rotating speed of the polishing wheel is 7m / min;

[0035] The abrasive belt used in the second mechanical polishing is a 240# non-woven endless belt, the rotational speed of the abrasive belt is 5 m / min, the feed speed is 3 m / min, and the rotational speed of the polishing wheel is 10 m / min.

[0036] The dirt and surface stress on the surface of the back plate are removed, and the service life is prolonged. It is qualified after polishing for 25 minutes.

Embodiment 3

[0038] This embodiment provides a polishing process for the back plate in the target assembly, the polishing process includes sequentially performing first mechanical polishing and second mechanical polishing on the target back plate;

[0039] The abrasive belt used in the first mechanical polishing is a non-woven endless belt of 600#, the rotating speed of the abrasive belt is 12m / min, the feed rate is 7m / min, and the rotating speed of the polishing wheel is 6m / min;

[0040] The abrasive belt used in the second mechanical polishing is a 240# non-woven endless belt, the rotational speed of the abrasive belt is 7m / min, the feed speed is 7m / min, and the rotational speed of the polishing wheel is 8m / min.

[0041]The dirt and surface stress on the surface of the backplane are removed, and the service life is prolonged. It is qualified after polishing for 27 minutes.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a polishing process for a back plate in a target material assembly. The polishing process comprises the steps that first mechanical polishing and second mechanical polishing are sequentially conducted on the target material back plate, wherein an abrasive belt used in first mechanical polishing is a 600 # non-woven fabric ring belt; and an abrasive belt used in second mechanical polishing is a 240 # non-woven fabric ring belt. According to the polishing process for the back plate in the target material assembly provided by the invention, through the design of the polishing process, different abrasive belts and specific polishing sequences are adopted to remove surface dirt, and meanwhile, the service life of the back plate is prolonged.

Description

technical field [0001] The invention relates to the field of target polishing, in particular to a polishing process for a back plate in a target assembly. Background technique [0002] In the semiconductor industry, the target assembly is composed of a target and a target back plate that meet the sputtering performance. The target back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. [0003] CN202830156U discloses a kind of target material back plate, is provided with sealing groove in the target material back plate, under the premise of not changing the groove depth and groove width of sealing groove, other dimensions of the sealing groove on the target material back plate are improved, so that The capacity of the sealing groove decreases, thereby reducing the part of the sealing ring entering the sealing groove and increasing the part exposed outside the sealing groove. Since the part o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00B24B21/00
CPCB24B1/00B24B21/008
Inventor 姚力军窦兴贤王学泽王青松刘明健
Owner 合肥江丰电子材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap