Semiconductor epitaxial equipment and base assembly thereof

Abstract

The invention provides a base assembly in semiconductor epitaxy equipment, which comprises a fixed base and a supporting piece, wherein the supporting piece is rotatably arranged in a rotating grooveformed on the fixed base, a side blowing passage and a bottom blowing passage are formed in the fixed base, and the side blowing passage is provided with a side blowing hole on the side wall of the rotating groove; the bottom blowing passage is provided with a bottom blowing hole in the bottom wall of the rotating groove; the bottom blowing passage is used for spraying gas to the bottom of the supporting piece so as to lift the supporting piece in the rotating groove; a plurality of driving parts are arranged on the side wall of the supporting piece, and the side blowing channel is used for spraying gas to the side wall of the supporting piece and the driving parts so as to drive the supporting piece to rotate. According to the base assembly disclosed in the invention, the side blowing passage and the bottom blowing passage respectively supply air to the side blowing hole and the bottom blowing hole independently, the height and the rotating speed of the supporting piece can be adjusted independently, so that the accuracy of controlling the rotating speed of the supporting piece and the stability of the overall structure of the base assembly are improved, and the process effect ofa semiconductor process is improved. The invention also provides the semiconductor epitaxial equipment.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing equipment, in particular to a base assembly for driving a wafer tray to rotate and a semiconductor epitaxial equipment including the base assembly. Background technique [0002] In the semiconductor process, it is often necessary to perform epitaxial growth of semiconductor materials (such as Si, Ge, SiGe, GaAs, AlN, GaN, SiC, etc.) on the substrate, and it is necessary to continuously provide heat to the growth system during the epitaxial growth process. The epitaxy temperature of silicon is usually 1000-1200°C, and the epitaxy temperature of some semiconductor materials is higher than that of single crystal silicon, for example, the temperature of silicon carbide epitaxy is usually 1500-1800°C, and the growth time of silicon carbide epitaxy is longer than that of silicon longer. [0003] The common silicon carbide epitaxial heating method is coil induction heating, in which a ...

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Problems solved by technology

[0005] However, when using the existing air circuit drive components to drive the rotary device to rotate, the stability of the rotary device often decreases with the increase of the rotation rate, causing the rotary device and the tray to vibrate violently, affecting the semiconductor epitaxial layer grown on the wafer surface. Uniformity of

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