Manufacturing method of semiconductor structure, semiconductor structure, and semiconductor device

A manufacturing method and semiconductor technology, applied to the structure of optical waveguide semiconductors, semiconductor lasers, laser components, etc., can solve the problems of high cost and large volume, and achieve the effects of simple production, high light output power, and reduced volume

Active Publication Date: 2021-03-09
度亘核芯光电技术(苏州)有限公司
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  • Abstract
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  • Claims
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Problems solved by technology

[0002] In the prior art, the semiconductor structure generally emits light from one side. When the semiconductor structure that emits light from one side is used to combine beams to achieve higher power, many semiconductor structures are required, which are costly and bulky.

Method used

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  • Manufacturing method of semiconductor structure, semiconductor structure, and semiconductor device
  • Manufacturing method of semiconductor structure, semiconductor structure, and semiconductor device
  • Manufacturing method of semiconductor structure, semiconductor structure, and semiconductor device

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Embodiment Construction

[0038] The terms "first", "second", "third" and so on are only used for distinguishing descriptions, and do not represent sequence numbers, nor can they be understood as indicating or implying relative importance.

[0039] In addition, the terms "horizontal", "vertical", "overhanging" and the like do not mean that the components are absolutely horizontal or overhanging, but may be slightly inclined. For example, "horizontal" only means that its direction is more horizontal than "vertical", and it does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0040] In the description of the present application, it should be noted that the orientation or positional relationship indicated by the terms "inner", "outer", "left", "right", "upper", "lower" etc. are based on the Orientation or positional relationship, or the orientation or positional relationship that the application product is usually placed in use, is only for the convenience of des...

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Abstract

The present application provides a method for fabricating a semiconductor structure, a semiconductor structure, and a semiconductor device, and relates to the technical field of semiconductors. The semiconductor structure of the present application includes a chip body and a plurality of resonant cavity structures, wherein each resonant cavity structure includes a first reflector and a second reflector respectively arranged on two light-passing end faces, and the reflectivity of the first reflector is The reflectivity is greater than that of the second reflection mirror, and is used to form the output window of the resonant cavity structure on the second reflection mirror; in any two adjacent resonant cavity structures, the output windows are respectively located on the two light-passing end faces. The manufacturing method of the semiconductor structure includes: obtaining a chip body; coating a film on the first light-passing end face and the second light-passing end face to form the first reflector and the second reflector, so the semiconductor structure manufactured by the present application has multiple resonances Cavity structure, and the two adjacent resonant cavity structures emit light from different sides, so that bidirectional lasing can be realized on a single semiconductor structure, and the light output power is high.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and in particular, to a method for fabricating a semiconductor structure, a semiconductor structure, and a semiconductor device. Background technique [0002] In the prior art, the semiconductor structure generally emits light from one side. When the semiconductor structure that emits light from one side is used to combine beams to achieve higher power, many semiconductor structures are required, which are costly and bulky. Contents of the invention [0003] The purpose of the embodiments of the present application is to provide a method for fabricating a semiconductor structure, a semiconductor structure, and a semiconductor device, which can realize bidirectional lasing on a single semiconductor structure. [0004] In a first aspect, an embodiment of the present invention provides a semiconductor structure, including a chip body and a plurality of resonant cavity structures, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/20H01S5/0225H01S5/10H01S5/12
CPCH01S5/10H01S5/12H01S5/2004H01S5/2018
Inventor 杨国文刘育衔
Owner 度亘核芯光电技术(苏州)有限公司
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