Manufacturing method of 3D memory device

A manufacturing method and storage device technology, applied in the field of memory, can solve the problems of 3D storage device read and write effects, channel current reduction, etc., to achieve the effects of increasing channel current, ensuring voltage characteristics, and improving production efficiency

Pending Publication Date: 2020-12-29
YANGTZE MEMORY TECH CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the number of layers of 3D memory devices increases, the channel current will

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of 3D memory device
  • Manufacturing method of 3D memory device
  • Manufacturing method of 3D memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0030] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0031] If it is to describe the situation directly on another layer or an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a manufacturing method of a 3D memory device. The manufacturing method comprises the steps: forming a laminated structure on a substrate, wherein the laminated structure comprises interlayer dielectric layers and interlayer sacrificial layers which are alternately stacked; forming a channel hole passing through the laminated structure; forming a functional layer and a channel layer in the channel hole; forming a doped layer covering the channel layer; and annealing the doped layer so as to enable impurities in the doped layer to enter the channel layer. According to themanufacturing method, doped impurities are provided for the channel layer through the doped layer, and low-concentration doping of the channel layer is realized, so that the influence on other electrical properties of the 3D memory device is reduced while the channel current is improved.

Description

technical field [0001] The present invention relates to memory technology, and more particularly, to a method for manufacturing a 3D memory device. Background technique [0002] The development direction of semiconductor technology is the reduction of feature size and the improvement of integration. For storage devices, the improvement of the storage density of the storage device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. [0003] In order to further increase storage density, three-dimensionally structured memory devices (ie, 3D memory devices) have been developed. The 3D storage device includes a plurality of storage units stacked along the vertical direction, the integration degree can be doubled on a unit area wafer, and the cost can be reduced. [0004] In a 3D memory device,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/1157H01L27/11582
CPCH10B43/35H10B43/27
Inventor 刘磊周文犀夏志良李姗
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap