Storage unit of flash memory and method for forming same

A technology of storage unit and flash memory, which is applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve the problems of little performance improvement of flash memory, low data storage time, and weak carrier mobility, etc. Effects of carrier mobility, increased overlap area, and improved programming and reading efficiency
CN102637696BActive Publication Date: 2016-09-14SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Publication Date
2016-09-14

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Abstract

A storage unit of flash memory and a method for forming the same, wherein the storage unit of flash memory comprises: a semiconductor substrate; an insulating layer located on the surface of the semiconductor substrate; a floating gate layer located on the surface of the insulating layer; The bottom surface and the source line layer that runs through the floating gate layer and the insulating layer, and the source line layer covers the floating gate layer, and the source line layer is electrically isolated from the floating gate layer; Both sides of the line layer, and the control gate layer on the surface of the insulating layer, and the control gate layer is electrically isolated from the source line layer and the floating gate layer; the stress layer located on the control gate layer, the source line layer and the surface of the semiconductor substrate. The storage unit of the flash memory uses the stress effect to improve the programming efficiency and read efficiency of data, improve the retention and durability of data, and further reduce the size of the storage unit of the flash memory.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a storage unit of a flash memory and a forming method thereof. Background technique

[0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits, among which storage devices are an important type of digital circuits. In recent years, among storage devices, flash memory (flash memory) has developed particularly rapidly. The main feature of flash memory is that it can keep stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applications.

[0003] In the prior art, please refer to the storage unit of the flash memory figure 1 ,include:

[0004] A ...

Claims

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