Semiconductor structure and forming method thereof

Abstract

The invention relates to a semiconductor structure and a forming method thereof. The forming method comprises the following steps of providing a base which comprises a substrate and a fin part protruding out of the substrate, a well region being formed in the substrate, and first type ions being arranged in the well region; forming an inversion doped region and a threshold voltage regulation region in the fin part, the threshold voltage regulation region being located at one side of the top of the fin part, the inversion doped region being located below the threshold voltage regulation region,the threshold voltage regulation region having a first type of ions therein, and the inversion doped region having a second type of ions therein; and forming an isolation structure on the substrate exposed out of the fin part, wherein the isolation structure exposes the inversion doped region and the threshold voltage adjusting region. The forming method is advantaged in that the threshold voltage adjusting region is formed on one side of the top of the fin part, so the current density of the top position of the fin part is reduced, and the device channel is far away from the surface of the fin part through the inverted doping region, so a problem of flicker noise is solved, and the turn-on voltage of the device meets the performance requirement; in conclusion, performance of the device is improved through the inversion doping region and the threshold voltage adjusting region.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] In semiconductor manufacturing, with the development trend of VLSI, the feature size of integrated circuits continues to decrease. In order to accommodate the reduction in feature size, the channel length of MOSFETs has also been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. Difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effects (short-channel effects, SCE) more likely to occur. [0003] Therefore, in order to better adapt to the reduction of the fea...

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Problems solved by technology

However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effects (short-channel effects, SCE) more prone to occur

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