Superlattice Gradient Band-Hole Barrier Layer Structure and Infrared Detector

A technology of infrared detectors and superlattice layers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting the optical and electrical performance of infrared detection devices, poor controllability of interface quality, and reduced material quality. The effect of large band offset, meeting the design requirements, and small conduction band offset

Active Publication Date: 2022-03-22
WUHAN GAOXIN TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The change of superlattice period thickness in a short period of time will make the beam current of As more difficult to control, resulting in poor controllability of interface quality and lower material quality, which will affect the optical and electrical properties of infrared detection devices

Method used

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  • Superlattice Gradient Band-Hole Barrier Layer Structure and Infrared Detector
  • Superlattice Gradient Band-Hole Barrier Layer Structure and Infrared Detector

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Embodiment 1: A superlattice gradient energy band hole barrier layer structure, its specific structure from bottom to top is as follows:

[0026] The first-level superlattice, with a period number of 5, is composed of 5.4nm InAs, 0.9nm GaSb, 1.5nm AlSb and 0.9nm GaSb layers, and the period thickness is 8.7nm;

[0027] The second-level superlattice, with a period number of 5, consists of 5.4nm InAs, 0.6nm GaSb, 1.5nm AlSb and 1.2nm GaSb layers, with a period thickness of 8.7nm;

[0028] The third-level superlattice, with a period number of 5, is composed of 5.4nm InAs, 0.3nm GaSb, 1.5nm AlSb and 1.5nm GaSb layers, and the period thickness is 8.7nm;

[0029] The fourth-level superlattice, with a period number of 5, consists of 5.4nm InAs, 0nm GaSb, 1.5nm AlSb and 1.8nm GaSb layers, with a period thickness of 8.7nm.

[0030] According to the analysis and calculation of the energy band theory, the energy band gap of the hole barrier layer of this structure increases from 0...

Embodiment 2

[0031] Embodiment 2: A superlattice gradient energy band hole barrier layer structure, its specific structure from bottom to top is as follows:

[0032] The first-level superlattice, with a period number of 10, is composed of 5.7nm InAs, 0.6nm GaSb, 1.8nm AlSb and 0.6nm GaSb layers, and the period thickness is 8.7nm;

[0033] The second-level superlattice, with a period of 10, consists of 5.7nm InAs, 0.3nm GaSb, 1.8nm AlSb and 0.9nm GaSb layers, with a period thickness of 8.7nm;

[0034]The third-level superlattice, with a period of 10, consists of 5.7nm InAs, 0nm GaSb, 1.8nm AlSb and 1.2nm GaSb layers, with a period thickness of 8.7nm.

[0035] According to the analysis and calculation of the energy band theory, the energy band of the hole barrier layer of this structure increases from 0.3450eV to 0.5268eV step by step from the first-level superlattice, and the corresponding conduction band offset is 0.002 eV, and the valence band offset is 0.1838eV, fully meeting the design...

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Abstract

The invention relates to the technical field of hole barrier layers, and provides a superlattice gradient energy band hole barrier layer structure, which includes n-level superlattice layers, and each level of superlattice layers includes layers grown sequentially from bottom to top. The InAs layer, the first GaSb layer, the AlSb layer, and the second GaSb layer, wherein the periodic thickness of the InAs layer is A, the periodic thickness of the GaSb layer is C, and the periodic thickness of the AlSb layer is C. The periodic thickness of the AaSb layer is x=n-1 in the nth superlattice layer, and in each superlattice layer, the total periodic thickness A+B+C is equal. An infrared detector is also provided, comprising the above-mentioned superlattice gradient energy band-hole barrier layer structure. In the present invention, by changing the insertion position of the AlSb layer in the superlattice layers at all levels, that is, at , the energy band gradient can be realized without changing the periodic thickness of the superlattice, and the total growth time of each layer is kept constant, and the conduction of the barrier layer is stable. The band offset is small, and the valence band offset is large, which meets the design requirements of the hole barrier layer. The structure can be adjusted flexibly, and the material is easy to achieve epitaxial growth.

Description

technical field [0001] The invention relates to the technical field of hole barrier layers, in particular to a superlattice gradient energy band hole barrier layer structure and an infrared detector. Background technique [0002] The antimonide superlattice infrared detector is a research hotspot in the field of infrared detection technology in recent years. It has broad application prospects and is the preferred material for the third generation of infrared detectors. Antimonide superlattice materials have flexible energy band engineering design. Combined with molecular beam epitaxy technology, infrared detector structures that meet various needs can be grown according to the designed structure, especially InAs / GaSb II superlattice infrared detectors. . [0003] The absorption layer of a complete InAs / GaSb superlattice device structure usually consists of hundreds of periodic structures. There are problems such as stress mismatch and interface interdiffusion between InAs a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0304H01L31/0352H01L31/105
CPCH01L31/0304H01L31/035236H01L31/105
Inventor 刘永锋张传杰
Owner WUHAN GAOXIN TECH
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