Phase-change memory and manufacturing method of phase-change memory
A phase-change memory and phase-change memory technology, which is applied in the direction of electrical components, etc., can solve the problems of high power consumption and large programming current of phase-change memory, achieve low current density requirements, small thermal crosstalk, and avoid performance impact
Active Publication Date: 2021-03-02
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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Problems solved by technology
[0003] In the programming process of the phase change memory in the prior art, the programming current is usually relatively large, resulting in high power consumption of the phase change memory
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[0056] In order to thoroughly understand the present application, detailed steps and detailed structures will be provided in the following description, so as to explain the technical solution of the present application. The preferred embodiments of the present application are described in detail as follows, however, the present application may have other implementations besides these detailed descriptions. It should not be limited by the specific embodiments set forth herein. Rather, these embodiments are provided for a more thorough understanding of the present application and for fully conveying the scope disclosed in the present application to those skilled in the art.
[0057] See figure 1 , the phase change memory (Phase Change Memory, PCM) in the prior art includes a bit line (Bit Line, BL) 1 extending along a first direction, a word line (Word Line, WL) 2 extending along a second direction, and The phase-change memory cell 3 arranged between the word line 2 and the bi...
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The present application provides a phase-change memory and a method for manufacturing the phase-change memory. The phase-change memory includes a first conductive line, a second conductive line, and a phase-change memory unit. The first conductive line extends along a first direction, and the second conductive line Extending along the second direction, the phase change memory unit is vertically arranged between the second conductive line and the first conductive line, and the phase change memory unit includes gate elements and phase change elements stacked along the third direction, wherein the first direction , the second direction and the third direction are perpendicular to each other; the phase change element includes a phase change part and a side wall, at least one side of the phase change part along the first direction or the second direction is provided with a side wall, and the phase change part is in the first direction Or the size in the second direction is smaller than the size of the gate element in the corresponding direction, the effective cross-sectional area of the phase change part of the phase change memory provided by the embodiment of the present application is smaller, therefore, the phase change memory has a smaller programming current, Smaller power consumption.
Description
technical field [0001] The present application relates to the technical field of semiconductor storage, and in particular to a phase-change memory and a manufacturing method of the phase-change memory. Background technique [0002] Phase-change memory is a kind of non-volatile memory, which has the characteristics of high memory density, high reliability, and data retention without electricity. In the prior art, the principle of phase-change memory is: use phase-change materials in the The difference in resistivity after transition between crystalline states is used to store data. Specifically, the programming process of a phase change memory includes a writing process (set) and an erasing process (reset). The writing process refers to the process in which a phase change material changes from an amorphous state to a crystalline state. The wide and weak programming current allows the phase change material to gradually crystallize, and the phase change material can change fro...
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IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/231H10N70/826
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD