Semiconductor structure

Abstract

The invention provides a semiconductor structure which comprises a substrate; a grid electrode which is arranged on the substrate; a source electrode which is arranged in the substrate and located onone side of the grid electrode; a drain electrode which is arranged in the substrate and is positioned on the other side of the grid electrode; a grid extending part which is arranged on the substrateand is positioned between the grid and the drain, wherein the doping type of the grid is opposite to that of the grid extending part. Through the special semiconductor structure design, the power loss of the switching device can be effectively reduced, the switching frequency is greatly improved, and high-efficiency electric power conversion is achieved.

Description

technical field [0001] The present invention relates to a semiconductor structure, and more particularly to a semiconductor structure capable of reducing drain-to-gate capacitance. Background technique [0002] In many semiconductor structures, the field plate structure arranged between the gate and the drain is often used as an important device to disperse the electric field intensity of the drain region (drift region), so as to avoid Excessive concentration of the electric field can cause damage to the device. However, when the field plate structure is electrically connected to its adjacent gate, the field plate structure will also contribute a considerable amount of drain-to-gate capacitance. [0003] Generally speaking, for high-speed switching devices expected to achieve high-efficiency electrical power conversion, it is necessary to try to reduce the power loss during operation as much as possible to maintain high-speed switching between devices. However, when the sw...

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Problems solved by technology

However, the above-mentioned various methods still have many disadvantages, such as the increase of the resistance value

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