EEPROM programming precision correction circuit and method

A technology for calibrating circuits and memories, applied in static memory, read-only memory, information storage, etc., can solve the problems of large fuse blowing and trimming error, high laser trimming cost, large chip area, etc. Improve the trimming accuracy and correction accuracy, and the effect of flexible and precise adjustment

Active Publication Date: 2021-01-22
深圳市泰祺科技有限公司
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the laser trimming cost is high and the process is complicated; the fuse burnout trimming error is large and the yield is low; the diode trimming technology occupies a large chip area and is a one-way trimming

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • EEPROM programming precision correction circuit and method
  • EEPROM programming precision correction circuit and method
  • EEPROM programming precision correction circuit and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, a clear and complete description will be made below in conjunction with the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, and Not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0025] The preferred embodiment of the present invention is as figure 1 As shown, a kind of EEPROM memory programming accuracy correcting circuit disclosed by the present invention comprises a single polycrystalline EEPROM subcircuit 1, a reset subcircuit 2, an operation instruction control subcircuit 3, a signal input subcircuit 4 and a charge pump 5; the reset The sub-circuit 2 is electrically...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an EEPROM programming precision correction circuit and method. The EEPROM programming precision correction circuit comprises a single polycrystalline EEPROM sub-circuit, a reset sub-circuit, an operation instruction control sub-circuit, a signal input sub-circuit and a charge pump. The reset sub-circuit is used for detecting whether the EEPROM is in a chip test mode or not;in the test mode, the reset signal of the reset sub-circuit is effective; the reset sub-circuit generates a reset signal to the single polycrystalline EEPROM sub-circuit, the operation instruction control sub-circuit, the signal input sub-circuit and the charge pump, and the single polycrystalline EEPROM sub-circuit, the operation instruction control sub-circuit, the signal input sub-circuit andthe charge pump enter an initialization state and do not act; and if no reset signal comes, when the test enable signal is at a high level, an operation control instruction is generated by inputting different numbers of square waves to the CS chip selection end of the operation instruction control sub-circuit. According to the invention, the EEPROM memory is tested, adjusted and repaired through the combination of pin multiplexing and single polycrystalline EEPROM, the cost is low, and the reference source voltage can be flexibly and accurately adjusted at the same time.

Description

technical field [0001] The invention relates to the technical field of memory precision correction, in particular to an EEPROM memory programming precision correction circuit and method. Background technique [0002] Electrically Erasable Programmable Memory (EEPROM) is one of the most widely used memory elements today. Because it can rewrite the content at any time like RAM, and can store information for a long time like other ROMs, it has been widely used in microcomputers, micro-control circuits and gold card (IC card) projects. In the design and manufacture of integrated circuits, due to the design process and packaging, there is a certain gap between the actual manufacturing and the theory. With the improvement of integrated circuit integration, the high precision requirements of integrated circuits are becoming more and more obvious. Accuracy calibration is to achieve high precision integration. Necessary means of the circuit. [0003] Traditional EEPROM precision co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C16/20G11C5/14
CPCG11C16/3413G11C16/20G11C5/145G11C5/148Y02D10/00
Inventor 吕相容赵晴
Owner 深圳市泰祺科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap