Method for testing LED chip parameters
A technology of LED chips and parameters, which is applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems that the packaging parameters or patch parameters cannot be guaranteed to correspond accurately, achieve high testing efficiency and improve product reliability , Improve the effect of accuracy monitoring
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Embodiment 1
[0053] The method for testing the parameters of the LED chip, the specific steps include:
[0054] In step S1, the height of the half-cut is set to 150 μm, the cutting speed is 60 mm / s, the protrusion of the saw blade is 600 μm, the width of the cutting groove is 18 μm, and the depth of the micro-cutting is 25% of the chip thickness.
[0055] In step S2, the test current is 20 mA, the test direction is positive test, the corresponding test current flow time voltage is 1 ms, the brightness is 1 ms, and the dominant wavelength is 10 ms.
[0056] In step S3, the blade height is set at a distance of 60 μm, the initial feed speed is 5 mm / s, the normal cutting speed is 30 mm / s, the cutting slot width is 20 μm, and the depth of full penetration is 100% of the chip thickness.
[0057] In step S4, the preheating time on the heating plate of the film expander is 6s, and then the film is expanded, the temperature of the film expansion is 70°C, and the time of film expansion is 10s.
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Embodiment 2
[0062] The difference between embodiment 2 and embodiment 1 is:
[0063] In step S1, the blade height of the half-cut is set to 140 μm, the cutting speed is 50 mm / s, the protrusion of the saw blade is 610 μm, the width of the cutting groove is 20 μm, and the depth of the micro-cutting is 20% of the chip thickness.
[0064] In step S2, the test current is 20mA, the test direction is positive test, the corresponding test current flow time voltage is 3ms, the brightness is 3ms, and the dominant wavelength is 15ms.
[0065] In step S5, corresponding to the Mapping diagram, the parameter ranges are respectively set as follows: voltage: 2.0V; brightness: 220mcd; dominant wavelength: 623nm; use a marker pen to draw a frame on the expanded chip to delineate the range of the die, and then use Pointed tweezers take out the die one by one from the drawn range and place them on the copper plate.
Embodiment 3
[0067] The difference between embodiment 3 and embodiment 1 is:
[0068] In step S3, the blade height is set at a distance of 72 μm, the initial feed speed is 10 mm / s, the normal cutting speed is 35 mm / s, the cutting slot width is 17 μm, and the depth of full penetration is 100% of the chip thickness.
[0069] In step S4, the preheating time on the heating plate of the film expander is 7s, and then the film is expanded, the temperature of the film expansion is 65°C, and the time of film expansion is 15s.
[0070] In step S5, corresponding to the Mapping diagram, the parameter ranges are respectively set as follows: voltage: 1.95V; brightness: 240mcd; dominant wavelength: 621nm, use a marker to draw a frame on the expanded chip to delineate the range of the die, and then use Pointed tweezers take out the die one by one from the drawn range and place them on the copper plate.
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