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Method for testing LED chip parameters

A technology of LED chips and parameters, which is applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems that the packaging parameters or patch parameters cannot be guaranteed to correspond accurately, achieve high testing efficiency and improve product reliability , Improve the effect of accuracy monitoring

Active Publication Date: 2021-01-22
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides a method for testing the parameters of the LED chip to solve the problem in the prior art that the parameter testing is only done before the full cut-through, and the packaging parameters or patch parameters cannot be guaranteed to accurately correspond to the parameters of the LED chip itself

Method used

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  • Method for testing LED chip parameters
  • Method for testing LED chip parameters

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The method for testing the parameters of the LED chip, the specific steps include:

[0054] In step S1, the height of the half-cut is set to 150 μm, the cutting speed is 60 mm / s, the protrusion of the saw blade is 600 μm, the width of the cutting groove is 18 μm, and the depth of the micro-cutting is 25% of the chip thickness.

[0055] In step S2, the test current is 20 mA, the test direction is positive test, the corresponding test current flow time voltage is 1 ms, the brightness is 1 ms, and the dominant wavelength is 10 ms.

[0056] In step S3, the blade height is set at a distance of 60 μm, the initial feed speed is 5 mm / s, the normal cutting speed is 30 mm / s, the cutting slot width is 20 μm, and the depth of full penetration is 100% of the chip thickness.

[0057] In step S4, the preheating time on the heating plate of the film expander is 6s, and then the film is expanded, the temperature of the film expansion is 70°C, and the time of film expansion is 10s.

[0...

Embodiment 2

[0062] The difference between embodiment 2 and embodiment 1 is:

[0063] In step S1, the blade height of the half-cut is set to 140 μm, the cutting speed is 50 mm / s, the protrusion of the saw blade is 610 μm, the width of the cutting groove is 20 μm, and the depth of the micro-cutting is 20% of the chip thickness.

[0064] In step S2, the test current is 20mA, the test direction is positive test, the corresponding test current flow time voltage is 3ms, the brightness is 3ms, and the dominant wavelength is 15ms.

[0065] In step S5, corresponding to the Mapping diagram, the parameter ranges are respectively set as follows: voltage: 2.0V; brightness: 220mcd; dominant wavelength: 623nm; use a marker pen to draw a frame on the expanded chip to delineate the range of the die, and then use Pointed tweezers take out the die one by one from the drawn range and place them on the copper plate.

Embodiment 3

[0067] The difference between embodiment 3 and embodiment 1 is:

[0068] In step S3, the blade height is set at a distance of 72 μm, the initial feed speed is 10 mm / s, the normal cutting speed is 35 mm / s, the cutting slot width is 17 μm, and the depth of full penetration is 100% of the chip thickness.

[0069] In step S4, the preheating time on the heating plate of the film expander is 7s, and then the film is expanded, the temperature of the film expansion is 65°C, and the time of film expansion is 15s.

[0070] In step S5, corresponding to the Mapping diagram, the parameter ranges are respectively set as follows: voltage: 1.95V; brightness: 240mcd; dominant wavelength: 621nm, use a marker to draw a frame on the expanded chip to delineate the range of the die, and then use Pointed tweezers take out the die one by one from the drawn range and place them on the copper plate.

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Abstract

The embodiment of the invention discloses a method for testing LED chip parameters. The method comprises the steps of S1, carrying out the half-cutting operation of the chip, and forming a test point,S2, performing parameter test on the chip, and outputting a chip parameter test result and a Mapping graph of each parameter, S3, performing full cutting to form a plurality of independent tube cores, S4, expanding the film to generate a gap between the tube cores, S5, corresponding to the Mapping graph, defining a parameter range, clamping the tube core in the defined range, and placing the tubecore on a copper plate, S6, pricking the tube cores one by one, and outputting a parameter test result of a single tube core, and S7, comparing the chip parameter test result with the tube core parameter test result, and if the two test results meet the difference rate standard, passing the test. The fully-cut tube core is subjected to pricking measurement, and the chip test parameters are compared with the tube core pricking test parameters, so that the accuracy monitoring of the chip test parameters is improved, the accuracy of the product performance parameters is ensured, and the productreliability is improved.

Description

technical field [0001] The invention relates to the technical field of LED (Light Emitting Diode, light emitting diode) chip testing, in particular to a method for testing LED chip parameters. Background technique [0002] LED is called the fourth-generation lighting source or green light source. It has the characteristics of energy saving, environmental protection, long life, and small size. It is widely used in various indications, displays, decorations, backlights, general lighting, and urban night scenes. According to different functions, it can be divided into five categories: information display, signal lights, vehicle lamps, LCD backlight, and general lighting. LED chips have high luminous efficiency, wide color range and long service life, and have been widely used in various fields such as large-screen display, landscape lighting, traffic signal lights, and automobile status display. With the advancement and development of integrated circuit technology, products te...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L21/66H01L21/67
CPCH01L33/0095H01L22/20H01L21/67092
Inventor 郑军李琳琳齐国健闫宝华王成新
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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