Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of testing LED chip parameters

A technology of LED chips and parameters, applied in the direction of semiconductor/solid-state device testing/measurement, semiconductor devices, electrical components, etc., can solve problems such as the inability to guarantee the accurate correspondence of packaging parameters or patch parameters, achieve high test efficiency and improve product reliability performance, improve the accuracy of monitoring

Active Publication Date: 2022-02-08
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides a method for testing the parameters of the LED chip to solve the problem in the prior art that the parameter testing is only done before the full cut-through, and the packaging parameters or patch parameters cannot be guaranteed to accurately correspond to the parameters of the LED chip itself

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of testing LED chip parameters
  • Method of testing LED chip parameters

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The method for testing the parameters of the LED chip, the specific steps include:

[0054] In step S1, the height of the half-cut is set to 150 μm, the cutting speed is 60 mm / s, the protrusion of the saw blade is 600 μm, the width of the cutting groove is 18 μm, and the depth of the micro-cutting is 25% of the chip thickness.

[0055] In step S2, the test current is 20 mA, the test direction is positive test, the corresponding test current flow time voltage is 1 ms, the brightness is 1 ms, and the dominant wavelength is 10 ms.

[0056] In step S3, the blade height is set at a distance of 60 μm, the initial feed speed is 5 mm / s, the normal cutting speed is 30 mm / s, the cutting slot width is 20 μm, and the depth of full penetration is 100% of the chip thickness.

[0057] In step S4, the preheating time on the heating plate of the film expander is 6s, and then the film is expanded, the temperature of the film expansion is 70°C, and the time of film expansion is 10s.

[0...

Embodiment 2

[0062] The difference between embodiment 2 and embodiment 1 is:

[0063] In step S1, the blade height of the half-cut is set to 140 μm, the cutting speed is 50 mm / s, the protrusion of the saw blade is 610 μm, the width of the cutting groove is 20 μm, and the depth of the micro-cutting is 20% of the chip thickness.

[0064] In step S2, the test current is 20mA, the test direction is positive test, the corresponding test current flow time voltage is 3ms, the brightness is 3ms, and the dominant wavelength is 15ms.

[0065] In step S5, corresponding to the Mapping diagram, the parameter ranges are respectively set as follows: voltage: 2.0V; brightness: 220mcd; dominant wavelength: 623nm; use a marker pen to draw a frame on the expanded chip to delineate the range of the die, and then use Pointed tweezers take out the die one by one from the drawn range and place them on the copper plate.

Embodiment 3

[0067] The difference between embodiment 3 and embodiment 1 is:

[0068] In step S3, the blade height is set at a distance of 72 μm, the initial feed speed is 10 mm / s, the normal cutting speed is 35 mm / s, the cutting slot width is 17 μm, and the depth of full penetration is 100% of the chip thickness.

[0069] In step S4, the preheating time on the heating plate of the film expander is 7s, and then the film is expanded, the temperature of the film expansion is 65°C, and the time of film expansion is 15s.

[0070] In step S5, corresponding to the Mapping diagram, the parameter ranges are respectively set as follows: voltage: 1.95V; brightness: 240mcd; dominant wavelength: 621nm, use a marker to draw a frame on the expanded chip to delineate the range of the die, and then use Pointed tweezers take out the die one by one from the drawn range and place them on the copper plate.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the present invention discloses a method for testing LED chip parameters, including steps: S1, performing a half-cut operation on the chip to form a test point; S2, performing parameter testing on the chip, and outputting the chip parameter test result and a Mapping diagram of each parameter; S3, Full cutting to form several independent dies; S4, expanding the film to create gaps between the dies; S5, corresponding to the Mapping diagram, delimiting the parameter range, and clamping the dies within the delimited range, and placing them in the On the copper plate; S6, perform a test on the die one by one, and output the parameter test result of a single die; S7, compare the test result of the chip parameter with the test result of the die parameter, if the two test results meet the difference rate standard, the test is passed. By performing a test on the fully cut die, and comparing the chip test parameters with the die test parameters, the accuracy monitoring of the chip test parameters is improved, the accuracy of the product performance parameters is guaranteed, and the product reliability is improved.

Description

technical field [0001] The invention relates to the technical field of LED (Light Emitting Diode, light emitting diode) chip testing, in particular to a method for testing LED chip parameters. Background technique [0002] LED is called the fourth-generation lighting source or green light source. It has the characteristics of energy saving, environmental protection, long life, and small size. It is widely used in various indications, displays, decorations, backlights, general lighting, and urban night scenes. According to different functions, it can be divided into five categories: information display, signal lights, vehicle lamps, LCD backlight, and general lighting. LED chips have high luminous efficiency, wide color range and long service life, and have been widely used in various fields such as large-screen display, landscape lighting, traffic signal lights, and automobile status display. With the advancement and development of integrated circuit technology, products te...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/66H01L21/67
CPCH01L33/0095H01L22/20H01L21/67092
Inventor 郑军李琳琳齐国健闫宝华王成新
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com