Germanium-silicon photoelectric detector

Abstract

The embodiment of the invention discloses a germanium-silicon photoelectric detector, which is characterized by comprising a silicon slab waveguide layer, and a germanium absorption layer and a ridgewaveguide layer which are positioned on the silicon slab waveguide layer, wherein the germanium absorption layer comprises a first germanium absorption region and a second germanium absorption regionwhich are arranged at an interval; the ridge waveguide layer comprises a first waveguide region located between the first germanium absorption region and the second germanium absorption region; the ridge waveguide layer is used for receiving an optical signal and transmitting the received optical signal to the first germanium absorption region and the second germanium absorption region through thefirst waveguide region; and the width of the first waveguide region is narrowed along the transmission direction of an optical signal.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a germanium silicon photodetector. Background technique [0002] The preparation process of silicon photonics chips is compatible with standard semiconductor processes. The chips have the advantages of low cost and high integration, and have been widely used in the industry. In the field of optical communication, the receiving end of the silicon photonics chip usually uses a waveguide-type germanium-silicon photodetector to convert the optical signal into an electrical signal. [0003] However, when a high-power signal is input to the current waveguide-type silicon-germanium photodetector, the germanium absorption layer will easily appear in a saturated absorption state, resulting in signal distortion and information decoding errors. Contents of the invention [0004] In view of this, an embodiment of the present invention provides a silicon germanium photodete...

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Problems solved by technology

[0003] However, when the current waveguide-type germanium-silicon photodetector is input with a high-power signal, the germanium absorption layer will easily appear in a saturated absorption state, resulting in signal distortion and information decoding errors.

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