Germanium-silicon photoelectric detector

A photodetector, germanium silicon technology, applied in the field of photoelectric detection, can solve problems such as signal distortion and information decoding errors

Active Publication Date: 2021-02-09
WUHAN OPTICAL VALLEY INFORMATION OPTOELECTRONICS INNOVATION CENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, when the current waveguide-type germanium-silicon photodetector is input with a high-power signal, the germanium a

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  • Germanium-silicon photoelectric detector
  • Germanium-silicon photoelectric detector
  • Germanium-silicon photoelectric detector

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Embodiment Construction

[0034] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided for a more thorough understanding of the present invention and to fully convey the scope of the disclosure of the present invention to those skilled in the art.

[0035] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are no...

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Abstract

The embodiment of the invention discloses a germanium-silicon photoelectric detector, which is characterized by comprising a silicon slab waveguide layer, and a germanium absorption layer and a ridgewaveguide layer which are positioned on the silicon slab waveguide layer, wherein the germanium absorption layer comprises a first germanium absorption region and a second germanium absorption regionwhich are arranged at an interval; the ridge waveguide layer comprises a first waveguide region located between the first germanium absorption region and the second germanium absorption region; the ridge waveguide layer is used for receiving an optical signal and transmitting the received optical signal to the first germanium absorption region and the second germanium absorption region through thefirst waveguide region; and the width of the first waveguide region is narrowed along the transmission direction of an optical signal.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a germanium silicon photodetector. Background technique [0002] The preparation process of silicon photonics chips is compatible with standard semiconductor processes. The chips have the advantages of low cost and high integration, and have been widely used in the industry. In the field of optical communication, the receiving end of the silicon photonics chip usually uses a waveguide-type germanium-silicon photodetector to convert the optical signal into an electrical signal. [0003] However, when a high-power signal is input to the current waveguide-type silicon-germanium photodetector, the germanium absorption layer will easily appear in a saturated absorption state, resulting in signal distortion and information decoding errors. Contents of the invention [0004] In view of this, an embodiment of the present invention provides a silicon germanium photodete...

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Application Information

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IPC IPC(8): H01L31/109H01L31/0232
CPCH01L31/02327H01L31/109Y02P70/50
Inventor 陈代高肖希王磊胡晓张宇光张红广刘敏吴定益
Owner WUHAN OPTICAL VALLEY INFORMATION OPTOELECTRONICS INNOVATION CENT CO LTD
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