Light-emitting diode chip and manufacturing method thereof

Abstract

The disclosure provides a light-emitting diode chip and a manufacturing method thereof, which belong to the technical field of semiconductors. The light-emitting diode chip includes a substrate, an epitaxial layer on the substrate, and a transparent conductive layer on the epitaxial layer. The light-emitting diode chip also includes an N electrode and a P electrode, and the transparent conductive layer is provided with a through hole extending to the N-type layer. The N electrode is arranged in the through hole and is in ohmic contact with the N-type layer, and the P electrode is arranged on the area corresponding to the P-type layer of the transparent conductive layer, and is in ohmic contact with the P-type layer. The orthographic projection of the passivation layer on the transparent conductive layer is outside the orthographic projection of the N electrode and the P electrode on the transparent conductive layer; a plurality of grooves are also provided on the side of the transparent conductive layer that is in contact with the passivation layer , the passivation layer is located in multiple grooves, and the passivation layer is SiO 2 Floor. The chip can reduce the light absorption of the transparent conductive layer and improve the light extraction efficiency of the chip.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a light emitting diode chip and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Chips are the core components of LEDs. [0003] The existing LED chip includes a substrate and an epitaxial layer arranged on the substrate. The epitaxial layer includes an N-type layer, an active layer, and a P-type layer stacked on the substrate in sequence. The LED chip also includes an N electrode and a P electrode. The P-type semiconductor layer is provided with a groove extending to the N-type semiconductor layer, the N electrode is arranged on the N-type semiconductor layer in the groove, and the P electrode is arranged on the P-type semiconductor layer. Due to the poor mobility of holes in the P-type semiconductor, the lateral ...

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Problems solved by technology

[0004] The material of the transparent conductive layer is usually indium tin oxide (English: Indium tin oxide, referred to as: ITO). Although it is transparent, it still absorbs the light emitted by the active layer, which will affect the light output efficiency of the chip and cause the chip The brightness of the light is reduced

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