A preparation method of sic-hf(ta)c composite coating, composite coating and graphite base

A composite coating and graphite technology, applied in the coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of good compactness of the composite coating, long-term use of the graphite base, etc., and achieve good high temperature resistance , good compactness, enhance the effect of bonding strength

Active Publication Date: 2022-01-14
NANCHANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on the above technical problems existing in the prior art, one of the purposes of the present invention is to provide a method for preparing a SiC-Hf(Ta)C composite coating, through which the composite coating can be closely combined with the graphite substrate , and the compactness of the composite coating is good, which can effectively solve the technical problem that the graphite base cannot be used for a long time in a corrosive atmosphere above 2000°C

Method used

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  • A preparation method of sic-hf(ta)c composite coating, composite coating and graphite base
  • A preparation method of sic-hf(ta)c composite coating, composite coating and graphite base

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Embodiment 1

[0033] Such as figure 1 Shown, the preparation method of SiC-Hf(Ta)C composite coating provided by the present invention may further comprise the steps:

[0034] S1. Graphite substrate pretreatment: first, polish the graphite substrate with sandpaper, put it in alcohol, ultrasonically clean it for 40 minutes, then vacuum dry it at 100°C for 100 minutes, and place it on the graphite diverter plate;

[0035] S2, high-purity Si powder and high-purity SiO 2 The powders were mixed in a molar ratio of 1.06:1, placed at the bottom of a graphite crucible, and then the crucible was placed in a deposition furnace; an appropriate amount of tantalum pentachloride powder and hafnium tetrachloride powder were placed in a tantalum pentachloride evaporation tank and a tetrachloride evaporator, respectively. Standby in the hafnium chloride evaporation tank; open the vacuum device to vacuumize the vapor deposition furnace equipment, and then feed argon to make the equipment full of argon;

[00...

Embodiment 2

[0045] The preparation method of SiC-Hf(Ta)C composite coating provided by the present invention comprises the following steps:

[0046] S1. Graphite substrate pretreatment: first, polish the graphite substrate with sandpaper, put it in alcohol, ultrasonically clean it for 40 minutes, then vacuum dry it at 100°C for 100 minutes, and place it on the graphite diverter plate;

[0047] S2, high-purity Si powder and high-purity SiO 2 The powders are mixed at a molar ratio of 1.10:1, placed at the bottom of a graphite crucible, and then the crucible is placed in a deposition furnace; appropriate amounts of tantalum pentachloride powder and hafnium tetrachloride powder are placed in a tantalum pentachloride evaporation tank and a tetrachloride evaporator, respectively. Standby in the hafnium chloride evaporation tank; open the vacuum device to vacuumize the vapor deposition furnace equipment, and then feed argon to make the equipment full of argon;

[0048] S3. Raise the temperature...

Embodiment 3

[0052] The preparation method of SiC-Hf(Ta)C composite coating provided by the present invention comprises the following steps:

[0053] S1. Graphite substrate pretreatment: first, polish the graphite substrate with sandpaper, put it in alcohol, ultrasonically clean it for 40 minutes, then vacuum dry it at 100°C for 100 minutes, and place it on the graphite diverter plate;

[0054] S2, high-purity Si powder and high-purity SiO 2 The powders are mixed at a molar ratio of 1.05:1, placed at the bottom of a graphite crucible, and then the crucible is placed in a deposition furnace; appropriate amounts of tantalum pentachloride powder and hafnium tetrachloride powder are placed in a tantalum pentachloride evaporation tank and a tetrachloride evaporator, respectively. Standby in the hafnium chloride evaporation tank; open the vacuum device to vacuumize the vapor deposition furnace equipment, and then feed argon to make the equipment full of argon;

[0055] S3. Raise the temperature...

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Abstract

The invention discloses a preparation method of a SiC-Hf(Ta)C composite coating, a composite coating and a graphite base. The preparation method comprises the following steps: pre-treating the surface of a graphite substrate; mixing Si powder and SiO 2 The powders are mixed, put into the chemical vapor deposition furnace, and the chemical vapor deposition furnace is filled with argon; the temperature is raised to 1800-2000°C, and the reaction is carried out by keeping the furnace pressure at 5-10kPa, and the reaction time is 2-4h; the temperature is lowered to 1500-1700°C, pass into hafnium tetrachloride gas, tantalum pentachloride gas, methane, hydrogen and diluent gas argon, and carry out CVD deposition, the deposition time is 2-8h; after the reaction is completed, cool down in an atmosphere filled with argon to room temperature, and take out the product; the composite coating prepared by the method of the present invention has high connection strength with the graphite substrate, good compactness, high temperature resistance and good thermal shock resistance.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing a SiC-Hf(Ta)C composite coating, a SiC-Hf(Ta)C composite coating made by the preparation method, and the SiC-Hf(Ta)C composite coating deposited with the SiC-Hf(Ta)C Graphite base of Ta)C composite coating. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can convert electrical energy into light energy. As an environmentally friendly, green, energy-saving and efficient lighting source, LED is widely used in the fields of display, TV lighting decoration and lighting. LED epitaxial growth is the link with the highest industrial technology content in the preparation of LEDs and the greatest impact on the final product quality and cost control. In this process, the performance and quality of the graphite base will have a great impact on the wafer epitaxy....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/32
CPCC23C16/32
Inventor 戴煜吴建刘兴亮
Owner NANCHANG UNIV
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