Deep ultraviolet LED device and manufacturing method thereof

A technology of LED device and manufacturing method, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of low photoelectric conversion efficiency, and achieve the effect of enhancing photoelectric conversion efficiency, simple process, and good process stability

Active Publication Date: 2021-02-26
GUANGDONG INST OF SEMICON IND TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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[0006] The purpose of this application is to provide a deep ultraviolet LED device and its manufacturing method to

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  • Deep ultraviolet LED device and manufacturing method thereof
  • Deep ultraviolet LED device and manufacturing method thereof
  • Deep ultraviolet LED device and manufacturing method thereof

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[0047]In order to make the purpose, technical solutions and advantages of the embodiments of this application clearer, the technical solutions in the embodiments of this application will be described clearly and completely in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments It is a part of the embodiments of this application, but not all the embodiments. The components of the embodiments of the present application generally described and shown in the drawings herein may be arranged and designed in various different configurations.

[0048]Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the present application. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative w...

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Abstract

The invention provides a deep ultraviolet LED device and a manufacturing method thereof, and relates to the technical field of semiconductors. The deep ultraviolet LED device comprises a substrate, abuffer layer located at one side of the substrate, a light emitting layer on one side of the buffer layer, and an N-type electrode and a P-type electrode positioned on one side of the light-emitting layer, wherein the light-emitting layer comprises a P-type contact layer, the thickness of the P-type contact layer is 1-50 nm , and the N-type electrode and the P-type electrode are arranged at an interval. The deep ultraviolet LED device and the manufacturing method thereof provided by the invention have the advantage of higher photoelectric conversion efficiency.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a deep ultraviolet LED device and a manufacturing method thereof. Background technique [0002] Ultraviolet LED light sources have the advantages of small size, non-toxic environmental protection, long life, etc., and have broad application prospects in various fields such as water purification, medical equipment, full-color display, optical storage, and biochemical detection. It shows huge social and economic value. [0003] In AlGaN-based deep ultraviolet LEDs, the electro-optic conversion efficiency is the main parameter for evaluating device performance, and optimizing the structure of the p-type contact layer and improving the quality of the p-type ohmic contact are the keys to improving the electro-optic conversion efficiency of the device. [0004] Among them, in order to optimize the material growth quality and electrical contact, and avoid the process ...

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Application Information

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IPC IPC(8): H01L33/06H01L33/38H01L33/12
CPCH01L33/06H01L33/38H01L33/12
Inventor 李祈昕刘宁炀何晨光吴华龙陈志涛曾昭烩任远董斌
Owner GUANGDONG INST OF SEMICON IND TECH
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