Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Deep ultraviolet LED device and manufacturing method thereof

A technology of LED device and manufacturing method, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of low photoelectric conversion efficiency, and achieve the effect of enhancing photoelectric conversion efficiency, simple process, and good process stability

Active Publication Date: 2021-02-26
GUANGDONG INST OF SEMICON IND TECH
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of this application is to provide a deep ultraviolet LED device and its manufacturing method to solve the problem of low photoelectric conversion efficiency in AlGaN-based deep ultraviolet LEDs in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deep ultraviolet LED device and manufacturing method thereof
  • Deep ultraviolet LED device and manufacturing method thereof
  • Deep ultraviolet LED device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0048] Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a deep ultraviolet LED device and a manufacturing method thereof, and relates to the technical field of semiconductors. The deep ultraviolet LED device comprises a substrate, abuffer layer located at one side of the substrate, a light emitting layer on one side of the buffer layer, and an N-type electrode and a P-type electrode positioned on one side of the light-emitting layer, wherein the light-emitting layer comprises a P-type contact layer, the thickness of the P-type contact layer is 1-50 nm , and the N-type electrode and the P-type electrode are arranged at an interval. The deep ultraviolet LED device and the manufacturing method thereof provided by the invention have the advantage of higher photoelectric conversion efficiency.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a deep ultraviolet LED device and a manufacturing method thereof. Background technique [0002] Ultraviolet LED light sources have the advantages of small size, non-toxic environmental protection, long life, etc., and have broad application prospects in various fields such as water purification, medical equipment, full-color display, optical storage, and biochemical detection. It shows huge social and economic value. [0003] In AlGaN-based deep ultraviolet LEDs, the electro-optic conversion efficiency is the main parameter for evaluating device performance, and optimizing the structure of the p-type contact layer and improving the quality of the p-type ohmic contact are the keys to improving the electro-optic conversion efficiency of the device. [0004] Among them, in order to optimize the material growth quality and electrical contact, and avoid the process ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/06H01L33/38H01L33/12
CPCH01L33/06H01L33/38H01L33/12
Inventor 李祈昕刘宁炀何晨光吴华龙陈志涛曾昭烩任远董斌
Owner GUANGDONG INST OF SEMICON IND TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com