Semiconductor substrate, preparation method and electronic component

Abstract

The invention provides a semiconductor substrate. The semiconductor substrate comprises a first substrate surface, a second substrate surface, a through hole structure, a first isolation layer and aninductance layer, wherein the first substrate surface and the second substrate surface are opposite; the through hole structure penetrates through the first substrate surface and the second substratesurface; AND the first isolation layer and the inductance layer are arranged in a stacked mode. According to the semiconductor substrate, a concave part is formed in the inner surface of the through hole structure of the semiconductor substrate, thus the specific surface area of the through hole structure can be increased, the inner surface of the concave part is connected with the inner surface of the through hole structure to form a continuous inner surface, the first isolation layer covers the continuous inner surface, and the concave part is filled with the inductance layer, thereby beingconductive to increasing an inductance value by increasing the sectional area of the inductance layer, being convenient to adjust the inductance value by changing the structure of the through hole structure and the depth-to-width ratio of the concave part, and further expanding the application range. The invention further provides a preparation method of the semiconductor substrate and an electronic component comprising the semiconductor substrate.

Description

technical field [0001] The invention relates to the technical field of integrated circuit packaging, in particular to a semiconductor substrate, a preparation method and electronic components. Background technique [0002] With the rapid development of integrated circuit technology, microelectronic packaging technology has gradually become the main factor restricting the development of semiconductor technology. Among them, through-silicon via structure technology can make the stacking density of chips in the three-dimensional direction the highest and the interconnection lines between chips the shortest. , Smallest form factor, and greatly improved chip speed and low power consumption performance. [0003] As an important passive device in integrated circuits, inductors can be used to make filters and oscillators, and these devices need to have high inductance values. The TSV structure itself has a large aspect ratio and specific surface area, and is a good substrate for pr...

AI Technical Summary

Problems solved by technology

However, the thickness of the insulating layer of the TSV structure and the types of materials used are limited, and the control range of the filter in terms of inductance value is very limited, which will limit further applications.

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