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Integrated circuit system having super junction transistor mechanism and method of manufacturing same

An integrated circuit, main body technology, applied in the field of metal oxide semiconductor superjunction power transistor structure, can solve the problem of no solution found, no taught or suggested solution, etc.

Pending Publication Date: 2021-03-02
华羿微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Solutions to these problems have long been sought, but existing developments have not taught or suggested any solutions, and thus those skilled in the art have long eluded solutions to these problems

Method used

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  • Integrated circuit system having super junction transistor mechanism and method of manufacturing same
  • Integrated circuit system having super junction transistor mechanism and method of manufacturing same
  • Integrated circuit system having super junction transistor mechanism and method of manufacturing same

Examples

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Embodiment Construction

[0038] The following examples are described in sufficient detail to enable any person skilled in the art to make and use the application. It is to be understood that other embodiments will be apparent based on the present disclosure and that system, process or mechanical changes may be made without departing from the scope of the present application.

[0039] In the following description, numerous specific details are given to provide a thorough understanding of the application. It may be evident, however, that this application may be practiced without these specific details. To avoid obscuring the application, some well-known circuits, system configurations and process steps have not been disclosed in detail. Likewise, the drawings showing embodiments of the system are semi-diagrammatic and not drawn to scale, and in particular some of the dimensions are for clarity of presentation and are shown exaggerated in the drawn drawings. Where multiple embodiments are disclosed and...

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Abstract

The invention discloses an integrated circuit system comprising a discrete gate super junction cell, and the discrete gate super junction cell comprises a highly doped substrate comprising a first polarity; an epitaxial layer including the first polarity and grown on the highly doped substrate; a strip-shaped gate trench which is formed in the epitaxial layer; a strip-shaped gate polycrystalline silicon layer which is formed in the strip-shaped gate trench; a point body implant comprising a second polarity implanted adjacent to the strip gate trench opposite the strip gate polysilicon layer; and a conductive column including the second polarity, implanted in the center of the dot body implant, and extending into the epitaxial layer.

Description

technical field [0001] This application relates to the field of semiconductor fabrication, and more particularly to metal oxide semiconductor (MOS) superjunction power transistor structures. Background technique [0002] The development of voltage control mechanisms has evolved over time. For example, the power supply has been developed from 10 volts to 20 volts, and the DC power supply has been developed to 600 to 700 volt switching power supplies for commercial applications. During the development of high power devices, power transistors also developed slowly. During development, groups of intermediate voltage transistors switched in groups caused noise and reliability issues because the switching characteristics of the discrete transistors were not perfectly matched. [0003] As semiconductor technology changes and geometries shrink, maintaining reliable and operable power metal-oxide-semiconductor field-effect transistors (MOSFETs) can become more difficult. High outp...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/423H01L27/088H01L21/8234H01L21/28
CPCH01L27/088H01L21/823487H01L29/42356H01L29/4236H01L29/401H01L29/0634
Inventor 苏毅
Owner 华羿微电子股份有限公司