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System and method for automatically adjusting position of base relative to preheating ring in epitaxial furnace

A technology of relative position and automatic adjustment, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc., can solve the problems such as the inability to effectively guarantee the accuracy, the large influence of manual operation, and the reduction of production capacity.

Pending Publication Date: 2021-03-16
XIAN ESWIN MATERIAL TECH CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

First of all, manual operation is difficult and has high work intensity, requiring experienced technicians and two to three people to cooperate with each other; secondly, it takes a long time to adjust, which delays the recovery time of the equipment and reduces the production capacity; Finally, manual operation is greatly affected by personnel, the accuracy cannot be effectively guaranteed, and rework is required when necessary

Method used

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  • System and method for automatically adjusting position of base relative to preheating ring in epitaxial furnace
  • System and method for automatically adjusting position of base relative to preheating ring in epitaxial furnace
  • System and method for automatically adjusting position of base relative to preheating ring in epitaxial furnace

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Embodiment Construction

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0033] see figure 2 , which shows a system 20 for automatically adjusting the position of the susceptor 12 relative to the preheating ring 11 in the epitaxial furnace 1 provided by an embodiment of the present invention, wherein, for the purpose of clarity figure 2 Only the preheating ring 11 and the base 12 of the epitaxial furnace 1, the rotation axis X of the base 12 and the silicon wafer W carried on the base 12 are shown in the figure, other components of the epitaxial furnace 1 can be referred to figure 1 to understand, such as figure 2 The system 20 shown may include: a laser measuring instrument 21, a controller 22 and a drive mechanism 23; wherein,

[0034] The laser measuring instrument 21 is configured to measure the measured relative position information betwe...

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Abstract

The embodiment of the invention discloses a system for automatically adjusting the position of a base relative to a preheating ring in an epitaxial furnace. The system can comprise a laser measuring instrument, a controller and a driving mechanism. The laser measuring instrument is configured to measure actually-measured relative position information between the base and the preheating ring and transmit the actually-measured relative position information to the controller; the controller is configured to compare the actually-measured relative position information with reference relative position information generated when the base is located at a reference position relative to the preheating ring so as to obtain deviation between the actually-measured relative position information and thereference relative position information, and is further configured to generate a driving control instruction based on the deviation and send the driving control instruction to the driving mechanism inresponse to the fact that the deviation is larger than a set threshold value, wherein the driving control instruction is used for instructing the driving mechanism to drive the base to move towards the reference position relative to the preheating ring; and the driving mechanism is configured to drive the base according to the driving control instruction.

Description

technical field [0001] The invention relates to the technical field of semiconductor production, in particular to a system and method for automatically adjusting the position of a base relative to a preheating ring in an epitaxial furnace. Background technique [0002] The equipment currently used for vapor phase epitaxial growth of silicon wafers, that is, the main structure of the epitaxial furnace 1A is as follows figure 1 shown. The epitaxy furnace 1A may include: [0003] a base 10A, the base 10A is used to carry a silicon wafer W; [0004] The supporting shaft 20A is used to support the susceptor 10A and drive the susceptor 10A to rotate around the central axis XA at ​​a certain speed during epitaxial growth so that the silicon wafer W rotates together with the susceptor 10A, as shown in figure 1 indicated by arrows in [0005] An upper quartz bell jar 30A and a lower quartz bell jar 40A, the upper quartz bell jar 30A and the lower quartz bell jar 40A together encl...

Claims

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Application Information

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IPC IPC(8): C23C16/52C23C16/24C30B25/16C30B29/06
CPCC23C16/52C23C16/24C30B25/16C30B29/06
Inventor 曹岩牛景豪
Owner XIAN ESWIN MATERIAL TECH CO LTD
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